Semiconductor Slip Length Measurement via Laser Intensity Segmentation
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Solution Overview
Problem
Existing inspection systems struggle to accurately measure the length of slip on semiconductor substrates, especially when crystal defects occur, leading to decreased semiconductor device yield due to heat treatment conditions.
Innovation Solution
An inspection system comprising a holder, an irradiation part, and a detector that scans the semiconductor substrate with laser light and detects reflected or scattered light, setting specific intensity ranges to differentiate between regions with and without slip, allowing for precise extraction of slip length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional inspection methods are used to detect slip on semiconductor substrates, then the inspection process is simple, but the measurement precision of slip length is insufficient
Solution Approach 1:
The inspection system segments the detection process into multiple intensity ranges: a first intensity range for regions without slip and a second intensity range for slip regions. This segmentation allows the system to differentiate and measure slip length with higher precision by analyzing reflected light intensity variations across different regions of the semiconductor substrate surface.
Solution Approach 2:
The system changes the parameter of light intensity threshold by defining multiple intensity ranges. By setting the first intensity range for non-slip regions and the second intensity range for slip regions, the system adapts its detection parameters to accurately identify and measure slip length even in the presence of foreign matter or surface variations.
2Reliability
If heat treatment is performed on semiconductor substrates, then crystal defects such as slip occur, but the yield of semiconductor devices decreases due to increased slip length
Solution Approach 1:
The system replaces mechanical measurement methods with optical detection by irradiating laser light onto the semiconductor substrate surface and detecting reflected light intensity. This substitution enables non-contact, high-precision measurement of slip length, allowing for accurate quality control to maintain high semiconductor device yield despite the presence of crystal defects from heat treatment.
Solution Approach 2:
The system creates an optical copy of the substrate surface characteristics by detecting reflected light intensity distribution. This optical information copy allows for precise identification and measurement of slip regions without physically contacting or damaging the substrate, enabling accurate yield assessment and heat treatment optimization.
3Productivity
If the intensity threshold for detecting slip is set low to capture all potential slip regions, then more slip instances are detected, but false detection increases due to foreign matter
Solution Approach 1:
The detection process is segmented into multiple intensity ranges: a first intensity range for regions without slip and a second intensity range for slip regions. This segmentation enables the system to achieve both high detection coverage and high accuracy by systematically analyzing reflected light intensity across different thresholds, effectively distinguishing true slip regions from foreign matter.
Solution Approach 2:
The system dynamically adjusts detection parameters by defining multiple intensity ranges instead of using a single threshold. By setting the first intensity range for non-slip regions and the second intensity range for slip regions, the system optimizes detection sensitivity while maintaining high precision, achieving both comprehensive coverage and accurate identification of slip defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively extracts the length of slip on semiconductor substrates, even in the presence of foreign matter or intersections, thereby improving the accuracy of heat treatment condition optimization.
Implementation Method 1
an irradiation part configured to irradiate a first light toward a surface of the semiconductor substrate and scanning the first light over the surface
Implementation Method 2
a detector configured to detect an intensity of a second light generated by reflection or scattering of the first light at each point of the surface
Implementation Method 3
a detector configured to detect an intensity of a second light generated by reflection or scattering of the first light at each point of the surface
Data Source
AI summary
According to one embodiment, an inspection system includes a holder, an irradiation part, a detector, and a controller. The irradiation part irradiates a first light toward a surface of a substrate held on the holder. The detector detects an intensity of a second light generated by reflection or scattering of the first light. The controller sets a first intensity range corresponding to an intensity of light reflected or scattered by a region not including slip of the surface. The controller sets a second intensity range corresponding to an intensity of light reflected or scattered by the slip. An upper limit and a lower limit of the second intensity range each are larger than an upper limit of the first intensity range. The controller extracts, as a length of the slip, a length of a region where the intensity of the second light is included in the second intensity range.