Semiconductor Device with Slit-Defined Bonding for High-Frequency Signal Integrity
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Solution Overview
Problem
Current semiconductor devices with photorelays face challenges in transmitting high-frequency signals above several GHz with low loss, particularly in semiconductor testers for Dynamic Random-Access Memory (DRAM), requiring improved frequency characteristics and reliability.
Innovation Solution
The semiconductor device incorporates a mounting substrate and a semiconductor element with conductive bonding agents connecting electrode pads on a supporting substrate featuring slits, which enhances electrical connection reliability and frequency performance by allowing the conductive agents to spread and secure the joint, preventing short-circuits and ensuring effective high-frequency signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional bonding methods are used to connect electrode pads, then manufacturing is simpler, but transmission loss increases and frequency characteristics deteriorate at high frequencies above several GHz
Solution Approach 1:
The bonding process is segmented into multiple stages: initial bonding to establish electrical connection, then controlled spreading of conductive bonding agent through pre-formed slits in the supporting substrate. This segmentation allows the bonding agent to distribute evenly without excessive spreading, reducing transmission loss while maintaining manufacturing feasibility.
Solution Approach 2:
The supporting substrate is designed with localized slits at specific positions where conductive bonding agents need to spread. This local structural modification enables controlled spreading only where needed, improving frequency characteristics without requiring complete redesign of the entire bonding process.
2Reliability
If conductive bonding agents are allowed to spread freely to secure joints, then connection reliability improves, but short-circuits may occur between adjacent electrode pads
Solution Approach 1:
The supporting substrate is divided into regions with slits positioned between adjacent electrode pads. These slits act as controlled pathways that segment the spreading process, allowing bonding agents to spread sufficiently for reliable bonding while the substrate structure prevents uncontrolled spreading that would cause short-circuits.
Solution Approach 2:
The supporting substrate with its slit structure serves as an intermediary element between adjacent electrode pads. It mediates the spreading of conductive bonding agents, permitting controlled spreading for reliable connection while physically preventing direct contact between adjacent pads that would cause short-circuits.
3Reliability
If the supporting substrate structure is simplified for easier manufacturing, then production is easier, but frequency characteristics and signal transmission performance deteriorate at high frequencies
Solution Approach 1:
Instead of making the entire supporting substrate complex, slits are introduced only at specific local positions where conductive bonding agents need to spread. This localized structural modification improves frequency characteristics without requiring complex overall substrate design, maintaining ease of manufacture.
Solution Approach 2:
The supporting substrate features asymmetric slit patterns positioned specifically between certain electrode pads rather than uniform distribution. This asymmetric design provides the necessary frequency performance improvement only where needed, avoiding unnecessary complexity in other regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability and frequency characteristics of the semiconductor device, enabling accurate high-speed testing of semiconductor devices, including high-frequency DRAM, by reducing transmission loss and ensuring reliable connections for high-frequency signals.
Implementation Method 1
a first conductive bonding agent that connects the first electrode pad to the third electrode pad
Implementation Method 2
allowing the conductive agents to spread and secure the joint
Data Source
AI summary
According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.