Semiconductor Metallization with Slit Recesses for Laser Dicing

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Solution Overview

Problem

The separation of semiconductor wafers into chips using laser dicing is hindered by metal materials, which scatter laser light and reduce process reliability, leading to potential clamping or fraying of metal layers, thereby affecting chip quality and separation efficiency.

Innovation Solution

Designing metallization layers with slit-shaped recesses or gaps to minimize the intersection length of metal layers with the cutting line, allowing for efficient laser dicing by reducing the length of metal encountered by the cutting line and promoting clean separation of semiconductor wafers into chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If laser dicing is used to separate semiconductor wafers into chips, then cutting waste is avoided and dry cutting is achieved, but metal materials scatter laser light and reduce process reliability

Engineering Contradiction:
Improveseparation efficiencyVSAvoidprocess reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The metal layer is segmented by introducing slit-shaped recesses that divide the continuous metal layer into multiple sections. This segmentation reduces the length of metal material intersecting the laser cutting line, allowing the laser to pass through more effectively and maintain high separation efficiency while improving process reliability by reducing metal scattering.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The metal layer is designed with non-uniform local quality through slit-shaped recesses, creating regions of different metal density along the cutting path. The recesses are strategically positioned to minimize metal intersection at critical cutting zones while maintaining continuous metallization where electrical connectivity is required, thus resolving the contradiction between cutting efficiency and process reliability.

Inventive Principle:
Principle #3Local quality

2Stability of the object's composition

If metal layers are present in cut regions, then electrical connectivity is maintained, but laser light scattering increases and causes clamping or fraying of metal layers

Engineering Contradiction:
Improvecontinuous metallizationVSAvoidmetal layer disruption
Core Design Contradiction:
Stability of the object's compositionVSObject-generated harmful factors

Solution Approach 1:

The continuous metal layer is segmented into multiple sections by slit-shaped recesses. These recesses create gaps that reduce laser light scattering during dicing while the remaining metal sections maintain electrical connectivity. The segmentation prevents clamping and fraying by reducing the total metal volume intersecting the cutting line.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The metal layer structure is optimized with local quality variations through strategically positioned slit-shaped recesses. In regions where electrical connectivity is critical, the metal remains continuous or nearly continuous. In regions where laser cutting occurs, the recesses reduce metal presence to minimize scattering and disruption, thus maintaining overall metallization stability while preventing harmful metal layer disruption.

Inventive Principle:
Principle #3Local quality

3Productivity

If the cutting line intersects metal layers, then separation can be achieved, but the length of metal intersection reduces breakage strength and increases running costs

Engineering Contradiction:
Improvedicing speedVSAvoidbreakage strength
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The metal layer is segmented by slit-shaped recesses that reduce the continuous metal length intersecting the cutting line. This segmentation maintains separation capability while significantly reducing the total metal-material interaction length, thereby improving breakage strength of the separated chips and reducing laser running costs due to less energy dissipation on metal scattering.

Inventive Principle:
Principle #1Segmentation

4Reliability

If slit-shaped recesses are introduced in metal layers, then laser dicing reliability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedicing reliabilityVSAvoidmetallization structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The metal layer is segmented by introducing slit-shaped recesses that can be formed using standard semiconductor fabrication techniques such as photolithography and etching. While this segmentation increases structural complexity, the recesses are designed with simple geometries and standardized dimensions that can be integrated into existing manufacturing processes, thus improving dicing reliability without excessive increase in manufacturing complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The metallization structure is optimized with local quality variations through slit-shaped recesses positioned only in specific regions where laser cutting occurs. The recesses are not introduced throughout the entire metal layer but only where needed to improve dicing reliability, thus minimizing the increase in manufacturing complexity while achieving the desired reliability improvement.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the reliability and quality of the chip separation process by reducing metal layer disruption and maintaining continuous metallization, ensuring high-speed dicing with superior breakage strength and low running costs.

Implementation Method 1

separating a semiconductor wafer into at least two semiconductor units by dicing the semiconductor wafer with a laser beam

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS8017942B2Semiconductor device and method
Publication Date: 2011.09.13 INFINEON TECHNOLOGIES AG
  • US8017942B2 patent drawing
  • US8017942B2 patent drawing
  • US8017942B2 patent drawing

AI summary

A semiconductor device and method. One embodiment provides a semiconductor substrate having a plurality of cut regions. A metal layer is located within a cut region. The metal layer includes a recess, the recess having a slit-like shape.