3D Stacked Semiconductor Device Slit Sealing and Contact Formation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration density of semiconductor devices with memory cells in a single layer over a substrate has reached limitations, prompting the development of three-dimensional stacking to enhance operational reliability, but existing methods face challenges in maintaining structural stability and efficiency during manufacturing.
Innovation Solution
A method involving the formation of stacked structures with alternating material layers, creation of slits and contact holes, sealing layers, and selective etching to form contact plugs, which stabilizes the structure and improves integration density by dividing the contact region into portions with varying insulating layers, thereby supporting the stacked structure during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are stacked in three dimensions to improve integration density, then integration density increases, but structural stability deteriorates during manufacturing
Solution Approach 1:
The contact region is divided into multiple contact holes arranged in a matrix pattern, and the slits are segmented into multiple sections. This segmentation allows the structure to be built and stabilized incrementally, with each segment supported by sealing layers and insulating layers, thereby maintaining structural stability while achieving high integration density through three-dimensional stacking.
Solution Approach 2:
Different regions of the stacked structure are provided with different insulating layers (first slit insulating layer in sealed regions, second slit insulating layer in exposed regions). This local differentiation allows optimized electrical isolation and mechanical support in specific areas, maintaining structural stability during manufacturing while enabling high-density integration through selective positioning of contact holes and slits.
2Quantity of substance
If multiple slits and contact holes are formed to increase integration density, then integration density improves, but manufacturing complexity increases
Solution Approach 1:
Sealing layers are formed in advance to seal the slits before subsequent manufacturing steps. The first slit insulating layer is also formed preliminarily in the sealed regions. These preliminary actions prevent structural collapse and contamination during later processing steps, simplifying the overall manufacturing process despite the complexity of forming multiple slits and contact holes.
Solution Approach 2:
The sealing layer acts as an intermediary element that seals the slits and provides a stable platform for subsequent steps. The mask pattern serves as an intermediary tool to define the contact hole positions accurately. These intermediary elements simplify the manufacturing process by enabling controlled formation of complex three-dimensional structures with multiple slits and contact holes.
3Quantity of substance
If the contact region is divided into multiple contact holes to improve integration density, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The mask pattern serves multiple functions: it defines the positions of contact holes, protects underlying structures during etching, and ensures uniform spacing between contact holes. This multi-functionality simplifies the manufacturing process and reduces precision requirements by consolidating multiple alignment tasks into a single patterning step, while still achieving high integration density through the matrix arrangement of contact holes.
Solution Approach 2:
The spacing and dimensions of contact holes are optimized based on the specific manufacturing capabilities. By adjusting parameters such as contact hole diameter, depth, and spacing in the matrix pattern, the design accommodates manufacturing precision limitations while still achieving high integration density. The sealing layer thickness and material properties are also tuned to facilitate precise formation of multiple contact holes.
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a stacked structure with first material layers and second material layers that are stacked alternately with each other, forming a first slit that passes through the stacked structure, forming a second slit that passes through the stacked structure, forming a contact hole between the first slit and the second slit that passes through the stacked structure, forming a sealing layer that seals the first slit, the second slit and the contact hole, forming first openings that pass through the sealing layer to form first sealing regions and partially expose the first slit to form first exposed regions, forming a first slit insulating layer by filling the first exposed regions and first sealing regions, etching the sealing layer to open the contact hole, and forming a first contact plug in the contact hole.