Semiconductor Module Solder Self-Repair via Gate Voltage Control
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Solution Overview
Problem
Conventional semiconductor devices in power equipment face issues with solder cracks due to thermal stress, leading to potential breakage and limited device capacity, as existing solutions only manage heat resistance and collector current without addressing solder layer integrity.
Innovation Solution
A semiconductor device with a variable gate voltage circuit that measures collector-emitter voltage and adjusts gate voltage to control power applied to the power switching element, generating heat to melt and self-repair solder cracks, thereby extending device life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the power semiconductor element is used with high capacity, then the productivity and power output are improved, but solder cracks occur due to thermal stress, leading to device failure
Solution Approach 1:
The patent converts the harmful thermal stress that causes solder cracks into a beneficial self-repair mechanism. When cracks occur in the solder layer, the continued application of thermal stress generates heat that melts the solder material, allowing it to flow and fill the cracks, thereby automatically repairing the damage and restoring reliability without requiring device shutdown or external intervention.
Solution Approach 2:
The patent implements a self-service mechanism where the power semiconductor element automatically repairs its own solder layer cracks through internal heat generation during normal operation. The thermal energy naturally produced by the device during high-power operation is utilized to melt and refill cracked solder joints, enabling the device to maintain its own reliability without external repair systems.
2Reliability
If the collector current is limited to prevent solder crack progression, then the reliability is improved, but the capacity of the semiconductor device is reduced
Solution Approach 1:
Instead of limiting collector current to prevent solder crack progression, the patent inverts the approach by utilizing the thermal effect of high collector current operation to actively repair cracks. The harmful thermal stress is converted into a beneficial self-healing mechanism, allowing the device to operate at full capacity while automatically restoring solder layer integrity when cracks occur.
Solution Approach 2:
The patent inverts the conventional protective strategy. Rather than reducing operational stress (limiting collector current) to prevent crack progression, it maintains high operational stress and uses the resulting thermal energy to reverse the damage by melting and refilling cracks, thereby achieving both high reliability and full device capacity.
3Power
If the gate voltage is increased to improve switching performance, then the power output is improved, but the thermal stress on solder layers increases, causing cracks
Solution Approach 1:
The patent converts the harmful thermal stress generated by high gate voltage operation into a beneficial self-repair mechanism. The same thermal energy that causes solder cracks also melts the solder material to fill and repair cracks, transforming the harmful effect into a protective self-healing function that occurs automatically during normal high-power operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively self-repairs solder cracks by controlling temperature, prolonging its operational life and maintaining capacity without capacity limitations, even when cracks occur in the solder layer.
Implementation Method 1
the power switching element generates heat that melts the solder layer, to thereby self-repair the cracks
Implementation Method 2
the power switching element generates heat that melts the solder layer, to thereby self-repair the cracks
Data Source
AI summary
The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.


