Semiconductor Source Resistance Region for Short-Circuit Tolerance
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high short-circuit tolerance while maintaining low on-resistance, as previous designs either increase cell pitch or result in fluctuating on-resistance due to high sheet resistance in source resistance regions.
Innovation Solution
The semiconductor device incorporates a source resistance region with a higher sheet resistance than the source contact region, connected continuously through the source extension region, to generate a large voltage drop from the channel to the source electrode, improving short-circuit tolerance while maintaining low on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source resistance region is made longer to increase short-circuit tolerance, then the short-circuit tolerance is improved, but the cell pitch increases resulting in reduced on-current and increased on-resistance
Solution Approach 1:
The source resistance region is designed with a specific sheet resistance value (Rs) that is higher than the source contact region, creating local electrical property differentiation. This allows the source resistance region to provide sufficient voltage drop for short-circuit tolerance while maintaining a compact length, thus resolving the contradiction between reliability and cell pitch length
2Reliability
If the source resistance region is made longer to increase short-circuit tolerance, then the short-circuit tolerance is improved, but the on-resistance increases
Solution Approach 1:
The sheet resistance of the source resistance region is optimized to a specific range (100-1000 Ω/□) to achieve the desired voltage drop during short-circuit conditions. By controlling this parameter, the region provides adequate short-circuit tolerance while minimizing the impact on on-resistance during normal operation
3Reliability
If the source resistance region has high sheet resistance to reduce current, then the short-circuit tolerance is improved, but the on-resistance fluctuates largely
Solution Approach 1:
The source resistance region is designed with controlled sheet resistance in a specific range (100-1000 Ω/□), creating local electrical property differentiation. This controlled local quality provides sufficient voltage drop during short-circuit while maintaining stable on-resistance characteristics during normal operation
Solution Approach 2:
The source resistance region provides just enough resistance (not excessive) to generate the required voltage drop for short-circuit tolerance. By applying partial action principle with controlled sheet resistance, the design achieves adequate protection while maintaining stability and avoiding excessive on-resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively balances short-circuit tolerance and on-resistance, enhancing the device's reliability by reducing the cell pitch and stabilizing the source resistance, thereby improving the trade-off between these two performance metrics.
Implementation Method 1
The source resistance region adjacent to the source contact region in the in-plane direction has a sheet resistance higher than that of the source contact region
Data Source
AI summary
A drift layer has a first conductivity type. A well region has a second conductivity type. A well contact region has a resistivity lower than that of the well region. A source contact region is provided on the well region, separated from the drift layer by the well region, and has the first conductivity type. A source resistance region is provided on the well region, separated from the drift layer by the well region, is adjacent to the source contact region, has the first conductivity type, and has a sheet resistance higher than that of the source contact region. A source electrode contacts the source contact region, the well contact region, and the source resistance region, and is continuous with the channel at least through the source resistance region.