Semiconductor Structure with Spaced Supporters for 3DIC

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Solution Overview

Problem

The integration density of semiconductor components is limited by physical constraints such as the minimum size of components and increased interconnections, leading to RC delay and power consumption issues in two-dimensional integrated circuits, prompting the need for three-dimensional integrated circuits (3DIC) with effective stacking and connection methods.

Innovation Solution

A semiconductor structure featuring a semiconductor unit with bonding structures and supporters, where the supporters are metal or polymer blocks spaced apart from the bonding structures, allowing for reduced parasitic capacitance and increased signal transmission speed through the use of insulation layers and reflow processes to maintain mechanical support and adherence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conductive lines are placed close together to increase integration density, then the number of components per area increases, but parasitic capacitance increases and signal transmission speed decreases

Engineering Contradiction:
Improveintegration densityVSAvoidparasitic capacitance
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a vertical dimension by placing supporter structures between bonding structures in the Z-direction, allowing conductive lines to be spaced apart vertically while maintaining high horizontal integration density. This dimensional approach reduces parasitic capacitance between adjacent conductive lines without sacrificing the quantity of components per area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If conductive lines are spaced apart to reduce parasitic capacitance, then signal transmission speed improves, but integration density decreases

Engineering Contradiction:
Improveparasitic capacitanceVSAvoidintegration density
Core Design Contradiction:
Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The supporter structures are nested between the bonding structures, utilizing the vertical space efficiently. Multiple functional elements (supporters, bonding structures, conductive lines) are arranged in a nested configuration where supporters are positioned in the gaps between bonding structures, maximizing space utilization while maintaining proper spacing for reduced capacitance.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Adaptability or versatility

If more interconnections are added to increase device functionality, then the circuit capabilities improve, but RC delay and power consumption increase

Engineering Contradiction:
Improvecircuit functionalityVSAvoidRC delay
Core Design Contradiction:
Adaptability or versatilityVSLoss of time

Solution Approach 1:

By utilizing the vertical dimension with supporter structures, the patent enables better routing and spacing of interconnections in three-dimensional space. This allows for optimized signal paths that reduce RC delay while maintaining comprehensive circuit functionality, as conductors can be positioned to minimize resistance and capacitance effects without limiting the number or complexity of interconnections.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution reduces parasitic capacitance and enhances signal transmission speed in 3DIC structures by separating conductive lines with insulation layers and maintaining mechanical support through the use of polymer supporters that soften and adhere during reflow, improving the yield and efficiency of 3DIC manufacturing.

Implementation Method 1

polymer supporters that soften and adhere during reflow

Methodology Applied
Scientific EffectReflow process:

Implementation Method 2

polymer supporters that soften and adhere during reflow

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 3

reduces parasitic capacitance and enhances signal transmission speed in 3DIC structures by separating conductive lines with insulation layers

Methodology Applied
Scientific EffectParasitic capacitance reduction: Parasitic Capacitance

Data Source

PatentUS10825799B2Semiconductor structure
Publication Date: 2020.11.03 NAN YA TECH
  • US10825799B2 patent drawing
  • US10825799B2 patent drawing
  • US10825799B2 patent drawing

AI summary

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor unit, one or more bonding structures, and at least one supporter. The semiconductor unit includes at least one via. The one or more bonding structures are disposed over the semiconductor unit and electrically connected to the at least one via. The at least one supporter is disposed over the semiconductor unit. The at least one supporter is a metal block or a polymer block spaced apart from the one or more bonding structures.