Semiconductor Spacer Alignment for Conductive Plug Yield

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Solution Overview

Problem

As semiconductor integrated circuit technology advances, the shrinking size of gate lines and increasing device density lead to smaller process windows for forming conductive plugs, resulting in misalignment defects and yield loss during the formation of conductive plugs between gate lines.

Innovation Solution

A spacer is formed in a contact hole before creating a connection structure to prevent defects caused by misalignment, enhancing manufacturing yield by surrounding the connection structure within the contact hole and ensuring proper alignment of conductive materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the critical dimensions of gate lines and spacing between gate lines are reduced continuously to increase device density, then the device integration is enhanced, but the process window for forming conductive plugs becomes very small leading to misalignment defects

Engineering Contradiction:
Improvedevice densityVSAvoidalignment precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The spacer structure is formed in advance within the contact hole before the conductive plug formation process. This preliminary structure provides pre-defined alignment references and physical constraints that guide subsequent material deposition, ensuring that conductive plugs are formed at the correct positions even when critical dimensions are reduced. The spacer acts as a pre-established framework that prevents misalignment defects during the plug formation process.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the spacing between gate lines is reduced to enhance circuit integrity, then the device integration is improved, but misalignments in forming conductive plugs occur resulting in yield loss

Engineering Contradiction:
Improvecircuit integrityVSAvoidmanufacturing yield
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The spacer structure serves as an intermediary element between the contact hole and the conductive plug. It provides a transitional framework that mediates the alignment process, ensuring that the conductive plug is correctly positioned relative to the contact hole. This intermediary structure eliminates misalignment defects and prevents yield loss by acting as a guiding reference during the plug formation process.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If a spacer is formed in the contact hole to prevent misalignment defects, then the manufacturing yield is enhanced, but the device structure becomes more complex

Engineering Contradiction:
Improvemanufacturing yieldVSAvoidstructure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The spacer structure performs multiple functions simultaneously: it serves as an alignment reference, provides physical constraints for conductive plug positioning, defines the contact hole boundaries, and prevents material overflow. By consolidating these multiple functions into a single structure, the design avoids adding excessive complexity while achieving significant improvements in manufacturing yield.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10529825B2Semiconductor device and manufacturing method thereof
Publication Date: 2020.01.07 UNITED MICROELECTRONICS CORP
  • US10529825B2 patent drawing
  • US10529825B2 patent drawing
  • US10529825B2 patent drawing

AI summary

A semiconductor device includes a semiconductor substrate, a gate structure, a source/drain region, a source/drain contact structure, a first dielectric layer, a first spacer, and a first connection structure. The gate structure is disposed on the semiconductor substrate. The source/drain region is disposed in the semiconductor substrate and disposed at a side of the gate structure. The source/drain contact structure is disposed on the source/drain region. The first dielectric layer is disposed on the source/drain contact structure and the gate structure. The first spacer is disposed in a first contact hole penetrating the first dielectric layer on the source/drain contact structure. The first connection structure is disposed in the first contact hole. The first connection structure is surrounded by the first spacer in the first contact hole, and the first connection structure is connected with the source/drain contact structure.