Semiconductor Structure Forming Target Patterns with Diverse Spacings
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Solution Overview
Problem
Current semiconductor manufacturing techniques, such as self-aligned quadruple patterning, struggle to meet different spacing requirements between target patterns without compromising pattern quality, as they often rely on etching processes that can damage other film layers and are limited by equal pitch constraints.
Innovation Solution
A method involving the formation of discrete top core layers with connecting grooves, where a blocking structure is used to create a first mask spacer and subsequently a second mask spacer, allowing for the formation of target patterns with varying spacings based on the width of the bottom core layer, eliminating the need for etching to adjust spacings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-aligned quadruple patterning method is used to increase pattern density and reduce pitch, then the critical dimension is reduced and device performance is improved, but the method is limited to equal pitch constraints and cannot meet different spacing requirements
Solution Approach 1:
The patent divides the core layer into discrete top core layers with gaps between them, creating separate regions that can be independently patterned. This segmentation allows different spacing requirements to be met in different regions while maintaining the benefits of self-aligned patterning for critical dimension control.
Solution Approach 2:
The patent introduces a blocking structure in specific connecting grooves between top core layers, creating local variations in the pattern formation process. This allows certain regions to have different pitch requirements while other regions maintain uniform spacing, enabling both equal and unequal pitch patterns within the same substrate.
2Manufacturing precision
If etching process is used to adjust spacing between target patterns, then spacing requirements can be met, but other film layers are damaged
Solution Approach 1:
The patent performs preliminary patterning of the core layer to form top core layers with connecting grooves before final target pattern formation. The blocking structure is introduced at this preliminary stage, allowing spacing to be defined by the physical presence or absence of blocking material rather than by subsequent etching, thus avoiding damage to other film layers.
Solution Approach 2:
The blocking structure serves as an intermediary element that defines the spacing between target patterns. Instead of using etching to remove material and create spacing, the blocking structure physically occupies space and guides the conformal deposition process, thereby defining spacing without the harmful effects of etching on other film layers.
3Manufacturing precision
If conformal deposition is used to form spacer films, then uniform thickness is achieved, but spacer films remain on top surfaces that need to be removed
Solution Approach 1:
The patent selectively removes spacer films from specific locations (top surfaces of core layers and bottom surfaces) while retaining them on side walls where they are needed as masks. This extraction of excess spacer material simplifies the overall process by eliminating the need for additional masking steps, as the remaining spacer films automatically serve as the required masks for subsequent etching.
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. In one form, the method includes: providing a base, where a bottom core material layer is formed on the base, a plurality of discrete top core layers is formed on the bottom core material layer, an area between top core layers of the plurality of adjacent top core layers is a groove, and the groove includes a connecting groove; forming a first spacer film conformally covering the plurality of discrete top core layers and the bottom core material layer; forming a blocking structure in a remainder of the connecting groove exposed from the first spacer film; removing first spacer films on a top of the top core layers of the plurality of discrete top core layers and on the bottom core material layer using the blocking structure as a mask, to form a first mask spacer; removing the plurality of top core layers; patterning the bottom core material layer using the first mask spacer and the blocking structure as a mask, to form a bottom core layer; forming a second mask spacer on a side wall of the bottom core layer; and removing the bottom core layer. Through the blocking structure, a bottom core layer at a position corresponding to the connecting groove has a relatively large width, thereby directly forming target patterns with different spacings.