Semiconductor Spacer Structure for Reducing Coupling Capacitance
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Solution Overview
Problem
In highly integrated semiconductor devices, the reduced size of unit cells leads to increased coupling capacitance between bit lines and storage contact plugs, as well as between bit line contacts and storage contact plugs, which affects device performance.
Innovation Solution
A semiconductor device structure is implemented with stacked spacers and insulating layers having different dielectric constants on the sidewalls of bit line contacts and bit lines, and between bit line and storage node contacts, to reduce coupling capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of unit cell is reduced to improve integration density, then the degree of integration is improved, but the coupling capacitance between bit line and storage node contact plug increases
Solution Approach 1:
The patent applies local quality by introducing spacers with different dielectric constants at specific locations between the bit line and storage node contact plug. The first spacer region has a different dielectric constant than the second spacer region, allowing each region to be optimized for its specific function in reducing coupling capacitance while maintaining signal integrity.
Solution Approach 2:
The patent uses composite materials by combining spacers with different dielectric constants in series between the bit line and storage node contact plug. This composite structure of multiple dielectric layers creates an effective barrier against coupling capacitance that is greater than what a single uniform dielectric could provide.
2Productivity
If the distance between bit line and storage node contact plug is reduced due to smaller unit cell size, then the integration density is improved, but the coupling capacitance between bit line and storage node contact plug increases
Solution Approach 1:
The patent introduces spacers with different dielectric constants at specific locations between the bit line and storage node contact plug. The first spacer region has a different dielectric constant than the second spacer region, allowing each region to be optimized for its specific function in reducing coupling capacitance while maintaining signal integrity.
Solution Approach 2:
The patent uses composite materials by combining spacers with different dielectric constants in series between the bit line and storage node contact plug. This composite structure of multiple dielectric layers creates an effective barrier against coupling capacitance that is greater than what a single uniform dielectric could provide.
3Productivity
If the distance between bit line contact and storage node contact plug is reduced due to smaller unit cell size, then the integration density is improved, but the coupling capacitance between bit line contact and storage node contact plug increases
Solution Approach 1:
The patent introduces spacers with different dielectric constants at specific locations between the bit line contact and storage node contact plug. The first spacer region has a different dielectric constant than the second spacer region, allowing each region to be optimized for its specific function in reducing coupling capacitance while maintaining signal integrity.
Solution Approach 2:
The patent uses composite materials by combining spacers with different dielectric constants in series between the bit line contact and storage node contact plug. This composite structure of multiple dielectric layers creates an effective barrier against coupling capacitance that is greater than what a single uniform dielectric could provide.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of stacked spacers and insulating layers with varying dielectric constants effectively decreases coupling capacitance, improving the performance of semiconductor devices by minimizing electrical interference.
Implementation Method 1
a first insulating layer, a second insulating layer having a dielectric constant different from the first spacer, and a third insulating layer having a dielectric constant different from the second spacer are stacked
Data Source
AI summary
A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.