Semiconductor Spacer Structures for Capping Material Removal
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Solution Overview
Problem
The complex process sequence for removing capping material from gate electrode structures in semiconductor devices is inefficient, leading to material loss and increased risk of short circuits, especially when forming highly conductive metal semiconductor compounds, and requires multiple process steps that contribute to high manufacturing complexity and costs.
Innovation Solution
Embedding the semiconductor device in a fill material, such as oxide, and using a plasma-assisted anisotropic etch process to remove the capping material, which reduces material loss and eliminates the need for sacrificial protective spacer elements, allowing for precise control of spacer height and implantation of dopants for fine-tuning transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a complex process sequence is used to remove capping material from gate electrode structures, then complete removal is achieved, but material loss increases and manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming a spacer structure before removing the capping material. The spacer structure serves as a protective framework that prevents material loss during subsequent etching processes, while still allowing complete removal of the capping material through targeted plasma-assisted anisotropic etching.
Solution Approach 2:
The spacer structure acts as an intermediary element between the capping material and the gate electrode structure. It enables selective removal of the capping material while protecting the underlying gate electrode structure from damage, thus reducing material loss and simplifying the manufacturing process.
2Manufacturing precision
If multiple process steps are used to remove capping material, then complete removal is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the capping material removal process with the spacer structure formation into a single integrated process sequence. The plasma-assisted anisotropic etching simultaneously removes the capping material and defines the spacer structure, eliminating the need for separate protective spacer formation and removal steps.
Solution Approach 2:
The spacer structure serves multiple functions simultaneously: it protects the gate electrode structure during etching, defines the lateral boundaries of the active region, and enables selective access to the capping material. This self-service approach reduces the number of required process steps while maintaining manufacturing precision.
3Reliability
If sacrificial protective spacer elements are used, then gate electrode structure protection is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent extracts the protective function from separate sacrificial spacer elements and integrates it into the main spacer structure that is already required for device operation. This eliminates the need for additional sacrificial materials and their subsequent removal, reducing manufacturing complexity while maintaining gate electrode structure protection.
Solution Approach 2:
The spacer structure is designed to perform multiple functions: protecting the gate electrode structure during etching, defining the active region boundaries, and enabling selective capping material removal. This multi-functionality eliminates the need for separate sacrificial protective spacers, reducing the overall number of process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material loss, minimizes the risk of short circuits, simplifies the manufacturing process, and enables superior device topography, allowing for more efficient formation of contact elements in critical areas, thereby enhancing transistor performance and reducing manufacturing costs.
Implementation Method 1
using a plasma-assisted anisotropic etch process to remove the capping material
Implementation Method 2
using a plasma-assisted anisotropic etch process to remove the capping material
Data Source
AI summary
A semiconductor device is disclosed including a gate electrode structure and raised drain and source regions that extend to a first height level and a sidewall spacer element positioned adjacent the sidewalls of the gate electrode structure between the raised drain and source regions and the gate electrode structure. The sidewall spacer element includes an upper portion that extends above the first height level wherein an inner part of the spacer element faces the gate electrode structure and extends to a second height level that is less than a third height level of an outer part of the upper portion of the spacer element.