Semiconductor Structure Spacer Pitch Control
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Solution Overview
Problem
The traditional self-aligned quadruple patterning (SAQP) process for semiconductor manufacturing faces challenges in achieving diverse fin pitches, leading to increased costs and limited flexibility in pattern design due to the need for multiple masks and complex processes.
Innovation Solution
A semiconductor structure and forming method that utilize a main spacer structure layer, comprising first and second spacers, to define pitches between desired patterns, allowing for adjustable dimensions and positional relationships to achieve various pitches and enhance design freedom without requiring fin cuts or spacer removal steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional self-aligned quadruple patterning (SAQP) process is used to achieve diverse fin pitches, then pattern density can be increased, but process complexity and manufacturing cost increase due to multiple masks and complex steps
Solution Approach 1:
The patent segments the spacer formation process into multiple stages: first spacers are formed on first core layers, then second spacers are formed on the first spacers. This segmentation allows different pitch requirements to be satisfied at different stages, enabling diverse fin pitches without requiring complete removal and reformation of all spacers, thus reducing process complexity while maintaining high pattern density
Solution Approach 2:
The patent introduces dynamic adjustability in the spacer structure by allowing selective retention and modification of spacers at different regions. The main spacer structure layer can be dynamically adjusted to define different pitches in different areas, providing flexibility in pattern design without increasing overall process complexity
2Adaptability or versatility
If multiple masks and complex processes are used to achieve diverse fin pitches, then pitch flexibility can be improved, but manufacturing cost increases
Solution Approach 1:
The first spacers serve multiple functions: they act as initial patterning elements, serve as substrates for forming second spacers, and can be selectively retained as final spacers in regions where first pitch is required. This multi-functionality eliminates the need for separate processes for different pitch requirements, reducing manufacturing cost while maintaining pitch flexibility
Solution Approach 2:
The patent implements a nested structure where second spacers are formed on top of first spacers, creating a main spacer structure layer that combines both spacer types. This nesting allows the system to achieve multiple pitch values (first pitch defined by first spacers, second pitch defined by second spacers) without requiring completely separate patterning processes, thereby reducing manufacturing cost while maintaining versatility
3Adaptability or versatility
If fin cuts or spacer removal steps are used to achieve various pitches, then pitch diversity can be increased, but process steps and complexity increase
Solution Approach 1:
The patent performs preliminary action by forming both first and second spacers in sequence during the main spacer structure layer formation process. This preliminary formation of multiple spacer types eliminates the need for subsequent fin cuts or selective spacer removal steps, as the desired pitch diversity is already established in the spacer structure before the patterning process begins, thereby reducing overall process steps
Data Source
AI summary
A semiconductor structure and a forming method thereof are provided. The forming method includes: providing a base, where the base includes a first region; forming a bottom core material layer on the base; forming separate first core layers on the bottom core material layer of the first region; forming a first spacer on a side wall of the first core layer; removing the first core layer; after removing the first core layer, forming a second spacer on a side wall of the first spacer, where the first spacer and the second spacer located on the side wall of the first spacer constitute a main spacer structure layer; patterning the bottom core material layer by using the main spacer structure layer as a masking film to form a second core layer; removing the main spacer structure layer; after removing the main spacer structure layer, forming a third spacer on a side wall of the second core layer; removing the second core layer; and after removing the second core layer, patterning the base by using the third spacer as a masking film to form a desired pattern. Embodiments of the present disclosure can meet the demand of different types of pitches between the desired patterns, and are beneficial to accurately controlling the pitches between the desired patterns.