Semiconductor Stepped Structure Spacer Film Alignment
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Solution Overview
Problem
The existing methods for forming multi-stepped structures in semiconductor devices require repeated lithography and etching processes, leading to inefficiencies and potential misalignment issues, which can result in short circuits and open circuits due to positional deviations.
Innovation Solution
The use of a spacer film with higher etching resistance than the insulating layer is introduced in the sidewalls of openings, allowing for the formation of a stepped shape that prevents misalignment and reduces the need for repeated lithography and resist layer processing, thereby improving dimension precision and process efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If repeated lithography and etching processes are performed to form multi-stepped structures, then the stepped structure can be formed, but manufacturing complexity and processing time increase significantly
Solution Approach 1:
The spacer film is formed in advance on the sidewalls of openings before the multi-stepped structure formation process. This preliminary action establishes the stepped configuration early in the process, eliminating the need for repeated lithography and etching steps that would otherwise be required to create the same structure.
Solution Approach 2:
The formation process is segmented into distinct functional steps: first forming openings in the insulating layer, then depositing spacer films on the sidewalls, and finally forming the multi-stepped structure. This segmentation allows each step to be optimized independently and reduces the total number of processing cycles required.
2Shape
If repeated lithography and etching processes are performed, then the stepped structure can be formed, but manufacturing time increases
Solution Approach 1:
The spacer film formation is performed as a preliminary step that establishes the stepped configuration before the main multi-stepped structure formation. This preliminary action consolidates multiple operations into fewer steps, directly reducing the total manufacturing time required.
Solution Approach 2:
The spacer film deposition and the stepped structure formation are merged into an integrated process sequence. Instead of performing separate lithography and etching operations for each step, the spacer film serves as a template that guides the formation of the entire multi-stepped structure in a more efficient manner.
3Shape
If repeated lithography and etching processes are performed, then the stepped structure can be formed, but positional deviation occurs leading to short circuits and open circuits
Solution Approach 1:
The spacer film acts as an intermediary element that precisely defines the boundaries and positions of the stepped structure. By using the spacer film as a physical template or mask during subsequent etching processes, the method ensures accurate dimensional control and prevents positional deviations that would lead to electrical defects.
Solution Approach 2:
The spacer film is formed in advance to establish precise geometric boundaries before the multi-stepped structure is created. This preliminary positioning action ensures that subsequent processing steps follow accurate alignment references, minimizing positional deviation and preventing short circuits and open circuits.
Data Source
AI summary
According to one embodiment, a semiconductor device includes an insulating layer provided on a semiconductor substrate, an opening provided on the insulating layer, a spacer film provided in a side wall of the opening in a stepped shape, and configured to have an etching resistance lower than that of the insulating layer, and a conductive body provided in the opening to be configured to cover the spacer film.