Compound Semiconductor Growth Using Disposable Spherical Masks
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Solution Overview
Problem
The existing methods for manufacturing high-quality compound semiconductor substrates, such as GaN, are costly, time-consuming, and face issues with reproducibility and yield, while also requiring complex processes to improve light emitting efficiency and reduce power consumption.
Innovation Solution
A method involving the use of spherical balls to coat a substrate, deposit a metal layer, and grow a compound semiconductor layer laterally to form a continuous layer, which simplifies the process and reduces costs by eliminating the need for complex photolithography and epitaxial growth techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography and epitaxial growth techniques are used to manufacture high-quality compound semiconductor substrates, then manufacturing precision and quality are improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent uses spherical balls as temporary masking objects that are deposited, processed, and then removed. These disposable spherical balls simplify the overall process by eliminating the need for complex photolithography steps while maintaining the ability to create precise patterns for lateral overgrowth control.
Solution Approach 2:
The patent divides the substrate surface into multiple regions using spherical balls as masks, allowing selective growth in different areas. This segmentation approach enables controlled lateral overgrowth in specific zones while maintaining simplicity in the overall process flow.
2Manufacturing precision
If photolithography and epitaxial growth techniques are used to manufacture high-quality compound semiconductor substrates, then manufacturing precision and quality are improved, but manufacturing time and cost increase
Solution Approach 1:
The spherical balls serve as temporary, easily removable masks that eliminate time-consuming photolithography steps. The balls are deposited, processed, and removed in a streamlined sequence that significantly reduces total manufacturing time while maintaining substrate quality.
Solution Approach 2:
The spherical balls are deposited and positioned before the epitaxial growth process begins, establishing the growth pattern in advance. This preliminary masking action simplifies subsequent processing steps and reduces overall manufacturing time by eliminating intermediate lithography steps.
3Loss of energy
If a patterned substrate is used to reflect light and improve light emitting efficiency, then light emitting efficiency is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The spherical balls create temporary patterns that guide lateral overgrowth to form light-reflecting structures. These disposable masks enable the creation of efficient light management patterns without requiring complex permanent substrate patterning, thus improving light emitting efficiency while maintaining process simplicity.
4Stability of the object's composition
If conventional ELO method with SiO2 mask is used, then stress reduction is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The spherical balls replace complex SiO2 mask structures with simple, easily deposited and removed spherical objects. These disposable masks maintain the stress reduction functionality of conventional ELO methods while dramatically simplifying the manufacturing process and reducing costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-quality compound semiconductor substrates with improved light emitting efficiency and reduced power consumption, achieving high productivity and reproducibility at a lower cost compared to traditional methods.
Implementation Method 1
coating a plurality of the spherical balls on a substrate
Implementation Method 2
depositing a metal layer on the substrate coated with the spherical balls
Implementation Method 3
growing a compound semiconductor layer from a surface of the substrate exposed by removing the spherical balls
Data Source
Figure 1(a)~1(b)
Figure 2~4
Figure 5~6
AI summary
The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.