Semiconductor Etching Using Spin-On and Etch Stop Layers
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Solution Overview
Problem
It is challenging to improve the etching profile and fineness of patterns in semiconductor devices when two layers have similar physical and chemical properties, as simply adjusting the etchant type, dosage, or etching time is insufficient.
Innovation Solution
The method involves forming a spin-on material layer, an etch stop layer, and multiple mask layers on a substrate, with specific materials like SiON, SiN, Si, and C, to create a patterned mask layer that allows for selective etching of the spin-on material and pattern layers, improving etching precision and profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If simply changing the type or dosage of etchant or etching time is used, then the etching process is simple, but the etching profile and fineness of pattern cannot be improved when two layers are close in physical and chemical properties
Solution Approach 1:
The patent divides the etching process into multiple stages by introducing intermediate layers (spin-on material layer and etch stop layer) between the original layers. This segmentation allows each layer to be etched separately with optimized parameters, achieving better etching profile and fineness while managing process complexity through systematic division of the etching sequence.
Solution Approach 2:
The patent introduces intermediate layers (spin-on material layer and etch stop layer) that act as mediators between layers with similar physical and chemical properties. These intermediary layers have distinct etching characteristics that enable selective removal, allowing precise control over etching profile and pattern fineness without directly modifying the original problematic layers.
2Manufacturing precision
If multiple layers (spin-on material layer, etch stop layer, mask layers) are formed, then etching precision is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent segments the manufacturing process into distinct formation steps for each layer (spin-on material layer, etch stop layer, first mask layer, second mask layer). Each layer is formed with specific materials and properties that enable controlled etching, improving precision while organizing the complex process into manageable, sequential manufacturing steps.
Solution Approach 2:
Each layer in the patent structure has locally optimized properties: the spin-on material layer provides specific etching selectivity, the etch stop layer provides hardness and etching resistance, and the mask layers provide pattern definition. This local quality optimization allows high etching precision while maintaining ease of manufacture through specialized functional layers.
3Manufacturing precision
If etch stop layer is made harder than pattern layers, then selective etching is enabled, but material selection and process control become more difficult
Solution Approach 1:
The patent changes the hardness parameter of the etch stop layer relative to other layers, making it harder to enable selective etching. This parameter change creates distinct etching rates between layers, allowing precise control over which layers are removed first while maintaining material selection flexibility through systematic parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the etching profile and fineness of patterns, reduces the critical dimension of semiconductor devices, and allows for more accurate removal of layers with different materials, overcoming the limitations of similar layer properties.
Implementation Method 1
forming a spin-on material layer on the first pattern layer and the substrate
Implementation Method 2
forming an etch stop layer on the spin-on material layer
Implementation Method 3
patterning the photo-resistant layer to form a patterned photo-resistant layer
Implementation Method 4
using the patterned photo-resistant layer to etch the first mask layer and the second mask layer
Implementation Method 5
using the patterned mask layer to etch the etch stop layer, the spin-on material layer, and the first pattern layer
Data Source
AI summary
A method of manufacturing semiconductor device is provided in the present disclosure. The method includes forming a first pattern layer on a first area of a substrate, forming a spin on layer on the first pattern layer and the substrate, forming an etch stop layer on the spin on layer, and forming a first mask layer on the etch stop layer.