Semiconductor Device Stabilizing Threshold Voltage via Intermediary Node
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving high-speed switching and low ON-state resistance simultaneously due to unstabilized threshold voltages and difficulty in integrating all terminals on a single surface, particularly in devices combining MOSFETs and bipolar transistors.
Innovation Solution
A semiconductor device structure comprising an inverter with connected first and second conductive type field-effect transistors and a bipolar transistor, where the impurity regions are formed to be in direct contact, allowing for reduced ON-state resistance and high-speed switching by stabilizing the threshold voltages and enabling integration of all terminals on a single surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the sources of NMOSFET and PMOSFET are connected to the base of bipolar transistor, then low ON-state resistance and high-speed switching are achieved, but threshold voltages become unstabilized and operation becomes unstable
Solution Approach 1:
A new node is introduced between the MOSFET sources and the bipolar transistor base. This intermediary node allows the MOSFET sources to be connected to a common potential reference rather than directly to the base, stabilizing the threshold voltages while maintaining the low ON-state resistance and high-speed switching characteristics.
Solution Approach 2:
The connection structure is segmented by separating the MOSFET source connections from the bipolar transistor base connection. Instead of direct connection, the sources are connected to a shared node that is then connected to the base, creating distinct functional zones that resolve the stability issue while preserving performance benefits.
2Adaptability or versatility
If conventional wiring structure is used to connect all terminals, then device functionality is achieved, but all terminals cannot be formed on one surface and integration with other devices is difficult
Solution Approach 1:
Multiple terminals are merged onto a single surface by using the shared node between MOSFET sources as a common connection point. This consolidation eliminates the need for complex three-dimensional wiring structures and enables all terminals to be formed on one surface, greatly improving integration capability with other devices.
Data Source
AI summary
A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes being connected to each other, and a pnp bipolar transistor including a collector (C), a base (B) and an emitter (E), the base (B) receiving an output of the inverter.