3D Semiconductor Stack Layout for Stable Contact Plug Formation
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Solution Overview
Problem
The manufacturing process of three-dimensional semiconductor devices is complex and requires simplification to improve integration density and stability.
Innovation Solution
A semiconductor device design featuring a source structure with a first penetrating portion, a first stack structure divided into memory blocks by slits, and a second penetrating portion that overlaps the first penetrating portion, along with channel pillars passing through the stack structures, simplifies the manufacturing process by using etch stop layers and supporting structures to stabilize the formation of memory blocks and contact plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a three-dimensional semiconductor device structure is implemented to improve integration density, then the integration density is improved, but the manufacturing process complexity increases
Solution Approach 1:
The device is divided into multiple functional regions including first and second penetrating portions, first and second stack structures, and channel pillars. The first penetrating portion penetrates the source structure while the second penetrating portion penetrates the first stack structure, creating distinct functional zones that simplify the manufacturing process by allowing independent formation and optimization of each segment.
Solution Approach 2:
The patent implements a three-dimensional structure by adding vertical penetration dimensions to the conventional planar device architecture. The first and second penetrating portions extend vertically through multiple layers, creating a multi-dimensional device layout that increases integration density while maintaining manufacturability through systematic layer-by-layer fabrication approaches.
2Quantity of substance
If multiple penetrating portions and stack structures are added to increase integration density, then the integration density is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The source structure is formed with the first penetrating portion before the first stack structure is deposited. This preliminary formation of the penetrating portion provides a pre-defined alignment reference that simplifies subsequent fabrication steps and reduces the precision requirements for aligning the second penetrating portion with the first.
Solution Approach 2:
The source structure acts as an intermediary element that mediates between the first and second penetrating portions. By forming the first penetrating portion through the source structure first, the source structure provides a stable reference framework that facilitates precise alignment of subsequent structures without requiring direct high-precision alignment between the two penetrating portions.
3Reliability
If the second penetrating portion is made wider than the first penetrating portion to expose the source structure, then the contact plug formation is stabilized, but the device structure complexity increases
Solution Approach 1:
The second penetrating portion is designed with a locally different width compared to the first penetrating portion. This local variation in dimensions allows the second penetrating portion to expose the top surface of the source structure for stable contact plug formation, while maintaining the overall simplicity of the device structure through targeted rather than universal complexity.
Data Source
AI summary
A semiconductor device includes a source structure penetrated by a first penetrating portion, a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion.