Semiconductor Stack Isolation With Dielectric Wall Leakage Control
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for advanced manufacturing processes to achieve high-performance and low-power integrated circuits, while maintaining cost-effectiveness and efficiency.
Innovation Solution
The method involves forming a semiconductor structure with a dielectric wall between stack structures, where the dielectric wall is created after the first portion of the isolation structure is formed, using a CMP process to reduce over-etching and shrinkage risks, and isolating it from the substrate to minimize leakage, thereby improving the semiconductor structure's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the dielectric wall is formed before the isolation structure is completed, then the manufacturing process is simpler, but over-etching and shrinkage risks increase
Solution Approach 1:
The isolation structure's first portion is formed in advance before the dielectric wall is deposited. This preliminary action creates a foundation that allows the dielectric wall to be formed with proper support, reducing the risk of over-etching and shrinkage while maintaining a streamlined process flow.
Solution Approach 2:
The isolation structure is divided into a first portion (formed before dielectric wall) and a second portion (formed after dielectric wall). This segmentation allows each portion to be optimized for its specific function: the first portion provides early structural support, while the second portion completes the isolation after the dielectric wall is in place.
2Reliability
If multi-gate devices are integrated to improve gate control, then device performance improves, but fabrication complexity increases
Solution Approach 1:
The fabrication process is segmented into distinct stages: forming the first portion of the isolation structure, depositing the dielectric wall, and completing the isolation structure. This segmentation breaks down the complex multi-gate device fabrication into manageable steps, reducing overall process complexity while maintaining performance.
Solution Approach 2:
The first portion of the isolation structure is prepared in advance before the dielectric wall is formed. This preliminary preparation simplifies subsequent fabrication steps by establishing a stable foundation early in the process, making the overall multi-gate device integration more manageable.
3Object-generated harmful factors
If the dielectric wall is isolated from the substrate, then leakage is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The isolation structure is divided into two portions with the dielectric wall formed between them. This segmentation creates effective electrical isolation that reduces leakage current, while the modular approach keeps the manufacturing process organized and manageable.
Solution Approach 2:
The dielectric wall acts as an intermediary layer between the first and second portions of the isolation structure. This intermediate layer provides effective electrical isolation to reduce leakage, while its formation process integrates smoothly into the overall fabrication sequence.
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure extends above the isolation structure, and the first stack structure includes a plurality of first nanostructures along a first direction. The semiconductor structure also includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of second nanostructures along the first direction. A first dielectric wall between the first stack structure and the second stack structure, and the first dielectric wall is directly over a first portion of the isolation structure and surrounded by a second portion of the isolation structure, and a top surface of the first portion of the isolation structure is lower than a top surface of the second portion of the isolation structure.