Semiconductor Stack Structure With Dummy Support For Integration
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Solution Overview
Problem
The integration of two-dimensional semiconductor devices is limited by the cost of expensive processing equipment required for forming fine patterns, which restricts the increase in device performance and manufacturing efficiency.
Innovation Solution
A semiconductor device with a stack structure and support structures that include conductive layers and dummy patterns, allowing for enhanced integration and reliability through a stepped and vertical configuration, enabling efficient use of space and reducing the need for expensive equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If two-dimensional or planar semiconductor devices are used, then manufacturing process is simpler, but integration density is limited due to area constraints and expensive processing equipment requirements
Solution Approach 1:
The patent transitions from two-dimensional planar structures to three-dimensional vertical structures by stacking multiple conductive layers and memory cells vertically. This dimensional change allows integration density to increase significantly without requiring proportionally more expensive fine-patterning equipment, as the vertical stacking utilizes the third dimension (height) rather than only the horizontal plane.
2Quantity of substance
If fine patterns are formed to increase integration, then device performance improves, but processing equipment cost increases significantly
Solution Approach 1:
Instead of increasing integration density through finer horizontal patterning that requires complex and expensive equipment, the patent achieves higher integration by stacking structures vertically. This approach uses standard patterning equipment to create patterns that are then stacked in the vertical dimension, avoiding the need for extremely expensive fine-patterning tools while still achieving high integration densities.
Solution Approach 2:
The patent divides the semiconductor structure into multiple discrete stacked layers (conductive layers, insulating layers, memory cells) that can be formed using standard processing equipment. Each layer is patterned and formed separately, then stacked vertically, which allows the use of conventional equipment rather than requiring single-step ultra-fine patterning equipment.
3Quantity of substance
If three-dimensional stack structures are implemented, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms alignment features and reference structures in advance during the stacking process. sacrificial layers and spacer structures are created beforehand to define precise positions for subsequent layers. This preliminary structuring establishes alignment references that guide the formation of overlying layers, ensuring consistent vertical alignment without requiring extremely tight process control.
Solution Approach 2:
The patent uses intermediary structures such as sacrificial layers, spacer layers, and dummy patterns that facilitate alignment between stacked layers. These intermediary elements act as mediators that define geometric relationships and positioning references, allowing layers to be aligned through geometric constraints rather than requiring high-precision direct alignment processes.
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure including conductive layers stacked on the substrate. Moreover, the semiconductor device includes a dummy structure penetrating a stepped region of the stack structure. A portion of the dummy structure includes a first segment and a second segment. The first segment extends in a first direction in a plane parallel to an upper surface of the substrate. The second segment protrudes from the first segment in a second direction, in the plane, that intersects the first direction.