Semiconductor Stack Heat Dissipation Element for Gap Thermal Conduction
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Solution Overview
Problem
Miniaturization of semiconductor devices faces challenges with heat dissipation due to gaps between bonded semiconductor elements, which reduce thermal conductivity and lead to thermal management issues and design flexibility constraints.
Innovation Solution
Incorporating a heat dissipation element with higher thermal conductivity than the gap-filling material into the stack of semiconductor elements to enhance heat dissipation paths, replacing a portion of the gap-filling material and improving thermal management and design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If gap-filling material is used to fill gaps between bonded semiconductor elements, then the gaps are filled and structural integrity is improved, but thermal conductivity decreases and heat dissipation performance worsens
Solution Approach 1:
The patent changes the thermal conductivity parameter of the gap-filling material by replacing conventional materials (epoxy, polymer) with ceramic-based materials having higher thermal conductivity. This parameter change resolves the contradiction by maintaining gap-filling structural integrity while significantly improving heat dissipation performance.
Solution Approach 2:
The patent employs composite materials combining ceramic particles or fibers with matrix materials to create gap-filling materials that simultaneously provide structural support and enhanced thermal conductivity. The composite structure resolves the contradiction by integrating both mechanical stability and thermal management functions in a single material system.
2Productivity
If semiconductor elements are closely bonded to increase density, then miniaturization is achieved, but thermal management becomes more difficult due to heat accumulation
Solution Approach 1:
The patent applies local quality by creating high thermal conductivity pathways specifically in the gap regions between semiconductor elements, while maintaining close bonding for miniaturization. The ceramic-based gap-filling materials provide localized thermal management enhancement without compromising the compact stacked structure.
3Ease of manufacture
If conventional gap-filling materials are used, then manufacturing process is simple, but thermal conductivity is insufficient leading to thermal problems
Solution Approach 1:
The patent changes the material composition parameter from organic-based (epoxy, polymer) to inorganic ceramic-based materials, achieving both improved thermal conductivity and manufacturing compatibility. The ceramic materials can be applied using existing semiconductor manufacturing techniques while providing superior thermal performance and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases heat dissipation performance, improves thermal management, and enhances design flexibility for semiconductor stacks by creating additional heat dissipation paths, thereby addressing the thermal challenges associated with miniaturization.
Implementation Method 1
a heat dissipation element having higher thermal conductivity than that of the gap-filling material is added into the stack of semiconductor elements to replace a portion of the gap-filling material so as to increase heat dissipation paths
Data Source
AI summary
Disclosed are a semiconductor structure and a manufacturing method of a semiconductor structure. In one embodiment, the semiconductor structure includes a first semiconductor element, a second semiconductor element, a heat dissipation element and a gap-filling material. The second semiconductor element is on the first semiconductor element. The heat dissipation element is on the first semiconductor element and spaced apart from the second semiconductor element by a gap. The gap-filling material is filled in the gap between the second semiconductor element and the heat dissipation element.