Semiconductor Stack Supports for Structural Stability
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Solution Overview
Problem
Three-dimensional non-volatile memory devices face challenges in structural stability and yield due to the replacement of sacrificial insulating layers with conductive layers, which can lead to warp or collapse of the stack, resulting in bridging between conductive layers.
Innovation Solution
The semiconductor device incorporates supports with equilateral polygon cross-sections arranged equidistantly in intersecting directions, along with contact plugs between adjacent supports, to maintain structural stability and prevent stack collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If sacrificial insulating layers are replaced with conductive layers during fabrication, then the device functionality is improved, but the stack may warp or collapse leading to reduced yield
Solution Approach 1:
The patent divides the stack into multiple segments by introducing sacrificial insulating layers between conductive layers. These sacrificial layers act as temporary spacers that segment the structure during fabrication, preventing collapse while maintaining the ability to form continuous conductive paths after replacement.
Solution Approach 2:
The sacrificial insulating layers are deposited in advance before the final conductive layer formation. This preliminary action creates a temporary structural framework that prevents warp and collapse during subsequent processing steps, ensuring high yield before the sacrificial layers are eventually replaced.
2Quantity of substance
If vertical alternating layers of conductive and insulating materials are stacked for 3D memory, then integration density is improved, but structural stability deteriorates due to warp and collapse
Solution Approach 1:
The patent introduces sacrificial insulating layers with specific local properties (different from both conductive layers and final insulating layers) at strategic positions within the stack. These layers have tailored thicknesses and material characteristics that provide local structural support where needed most, preventing collapse while allowing high integration density elsewhere.
Solution Approach 2:
The patent creates a composite structure during fabrication by combining conductive layers, final insulating layers, and sacrificial insulating layers into a multi-material stack. This composite approach allows each material type to serve its specific function while collectively providing the structural stability needed to maintain high integration density throughout the fabrication process.
Data Source
AI summary
The present disclosure provides a semiconductor device with a structural stability. The semiconductor device includes a stack of vertical alterations of conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs electrically coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports.