Semiconductor Stack Sacrificial Layer Replacement via Depth-Varied Slits
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Solution Overview
Problem
Current methods for manufacturing semiconductor devices face challenges in easily replacing sacrificial layers with line patterns, particularly in three-dimensional semiconductor memory devices, where the complexity of stack structures and the need for precise slit formation and filling complicate the process.
Innovation Solution
The method involves forming slits of different depths through a stack to remove sacrificial layers and filling the resulting areas with line patterns, allowing for the efficient replacement of these layers and facilitating the integration of line patterns within the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If slits of different depths are formed to remove sacrificial layers, then the replacement of sacrificial layers with line patterns is enabled, but the manufacturing process complexity increases
Solution Approach 1:
The patent divides the stack into multiple regions by forming slits at different depths (first slits extending to first depth, second slits extending to second depth greater than first depth). This segmentation allows selective removal of sacrificial layers in different regions, enabling line patterns to be formed in specific areas while maintaining other structures intact, thus facilitating the replacement process despite increased procedural steps
Solution Approach 2:
The patent performs preliminary actions by forming all necessary slits (first and second slits) and removing sacrificial layers before forming the line patterns. This preliminary preparation creates ready-made cavities and pathways, making the subsequent line pattern formation simpler and more straightforward, even though the overall process complexity increases
2Manufacturing precision
If multiple slits of different depths are formed, then precise control of sacrificial layer removal is achieved, but the number of process steps increases
Solution Approach 1:
The patent applies local quality by forming first slits to a first depth and second slits to a greater second depth, creating different local conditions within the same stack structure. This allows precise control over which sacrificial layers are removed in which regions, enabling high manufacturing precision for selective layer removal while maintaining overall process integration
Solution Approach 2:
The patent introduces depth as an additional dimension for process control by varying slit depths. Instead of using multiple lateral approaches, the solution exploits the vertical dimension to create different removal depths, achieving precise sacrificial layer removal control without proportionally increasing the number of lateral process steps
Data Source
AI summary
Provided herein may be a method of manufacturing a semiconductor device including the step of replacing sacrificial layers of a stack with line patterns through slits that pass through the stack and have different depths.