Semiconductor Stacked Cap Nitride Layer Protection
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Solution Overview
Problem
Conventional semiconductor manufacturing methods damage the nitride layer of the stacked cap layer due to etchant materials like sulfur hexafluoride, compromising the robustness of the semiconductor device.
Innovation Solution
A manufacturing method that forms a semiconductor device with a stacked cap layer where a protection layer is used to prevent exposure of the nitride layer to etchant materials, ensuring the nitride layer remains intact by forming an opening in the protection layer rather than the nitride layer itself, allowing etching of the substrate without damaging the nitride layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If etchant material is introduced into the opening to etch the substrate, then the substrate etching is achieved, but the nitride layer is damaged by the etchant material
Solution Approach 1:
A protection layer is introduced as an intermediary between the etchant material and the nitride layer. The protection layer is formed on the stacked cap layer and is etched to form an opening, while the nitride layer is not exposed by this opening. This intermediary layer allows the etchant to reach the substrate without directly contacting and damaging the nitride layer, thus resolving the contradiction between achieving substrate etching and maintaining nitride layer integrity.
2Ease of manufacture
If the nitride layer is exposed by the opening, then the etchant material can reach the substrate, but the nitride layer is damaged
Solution Approach 1:
The cap layer is segmented into a stacked cap layer structure with multiple layers including oxide layers and a nitride layer. The protection layer is selectively etched to create an opening that segments the exposure path, allowing the etchant to reach the substrate while the nitride layer remains protected by the remaining cap layer structure. This segmentation approach enables controlled access for etching while maintaining protection of sensitive layers.
Data Source
AI summary
The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.