Semiconductor Stacked Strip Structure for Contact Overlay
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Solution Overview
Problem
The increasing demand for high-density, small-sized memory devices leads to reduced distances between electric contacts, increasing the likelihood of short circuits and decreasing stability in semiconductor devices.
Innovation Solution
A semiconductor structure with a stacked strip structure where the vertical stacked portions have a larger width than the horizontal stacked portions, enhancing the pitch of vertical conductive segments and enlarging the electrical contact overlay window to reduce the possibility of short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between electric contacts is reduced to achieve high element density, then the storage capacity is improved, but the possibility of short circuit increases and device stability decreases
Solution Approach 1:
The patent transitions from a planar contact layout to a three-dimensional stacked structure. Conductive strips are arranged vertically in multiple layers with insulating strips separating them, creating contact points in the vertical dimension rather than only in the horizontal plane. This dimensional change allows high density while maintaining adequate spacing to prevent short circuits.
Solution Approach 2:
The contact structure is segmented into multiple conductive strips separated by insulating strips. Each conductive strip forms an independent contact region, and the insulating strips create physical barriers between adjacent contacts. This segmentation prevents short circuits while enabling multiple contacts to be packed closely together in the stacked configuration.
2Quantity of substance
If the pitch of vertical conductive segments is reduced to increase contact density, then the storage capacity is improved, but the electrical contact overlay window decreases
Solution Approach 1:
The structure employs a nested arrangement where conductive strips and insulating strips are interleaved in alternating layers. The insulating strips are positioned between conductive strips, creating a nested pattern that maximizes the use of vertical space. This nesting allows high contact density while the insulating layers maintain adequate overlay windows for reliable electrical connections.
Data Source
AI summary
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate having a trench, a stacked strip structure formed in the trench, and at least a conductive structure. The stacked strip structure includes a plurality of interlaced conductive strips and insulating strips. Each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment. Each of the insulating strips has a horizontal insulating segment and two vertical insulating segments. The conductive structure is electrically connected to at least one of the conductive strips. The stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, wherein a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion.