3D Semiconductor Stacking With Capacitor Electrodes and Through-Vias
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity without compromising integration density.
Innovation Solution
A semiconductor device is designed with a three-dimensional arrangement of memory cells, incorporating a stacked structure that includes a first substrate with circuit elements and interconnection lines, a second substrate with through-vias and circuit elements, and a passive element structure with a conductive layer, enhancing integration by utilizing a capacitor structure and through-vias for improved connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged two-dimensionally, then device layout is simple, but data storage capacity is limited
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional stacked structure. Multiple substrates (first substrate, second substrate, third substrate) are stacked vertically to form multiple semiconductor structures, enabling memory cells to be arranged in three dimensions. This dimensional change dramatically increases data storage capacity while maintaining integration density through vertical stacking rather than horizontal expansion.
2Quantity of substance
If three-dimensional stacked structure is used, then data storage capacity increases, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor device into multiple independent substrates (first substrate, second substrate, third substrate) that can be manufactured separately. Each substrate contains specific circuit elements and interconnection lines, allowing parallel manufacturing processes. The substrates are then stacked and connected through through-vias, reducing overall manufacturing complexity compared to creating a monolithic three-dimensional structure.
Solution Approach 2:
The patent implements a nested structure where multiple semiconductor structures are stacked one on top of another. The first substrate forms a first semiconductor structure, the second substrate forms a second semiconductor structure, and the third substrate forms a third semiconductor structure. These nested layers are interconnected through through-vias that penetrate the substrates, creating a compact three-dimensional integration that manages manufacturing complexity through modular nesting.
3Ease of operation
If through-vias are used for connectivity, then inter-layer connection is improved, but device complexity increases
Solution Approach 1:
The through-vias in the patent serve multiple functions: they provide electrical connectivity between different substrates (first substrate, second substrate, third substrate), they act as structural support elements, and they enable signal routing across multiple layers. This multi-functionality improves inter-layer connectivity while reducing the need for additional dedicated connection structures, thereby managing device complexity.
Data Source
Figure 1
Figure 2~3
Figure 4A~4B
AI summary
A semiconductor device (100) may include: a first semiconductor structure (S1) including a first substrate (201), first circuit elements (220) on the first substrate, first circuit interconnection lines (280) on the first circuit elements, and a first peripheral region insulating layer (290); a second semiconductor structure (S2) including a first region of a second substrate (301) on the first semiconductor structure, second circuit elements (320) on the first region of the second substrate, and second circuit interconnection lines (380) on the second circuit elements; a capacitor structure including a first capacitor electrode (284P) spaced apart from the first circuit interconnection lines on a lower surface of the second substrate, a second region of the second substrate facing the first capacitor electrode, and a first through-via extending (TSV1) in the second substrate and electrically connected to the first capacitor electrode; and a third semiconductor structure (S3) including a third substrate on the second semiconductor structure, and memory cells on the third substrate.