Semiconductor Stacking Support Frame for Warpage and Heat Dissipation

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Solution Overview

Problem

Semiconductor devices face challenges in increasing electrical functionality within a limited footprint due to the limitations of conductive vias and encapsulants in providing structural support and heat dissipation, while also being prone to warpage.

Innovation Solution

The use of a support frame with interconnected horizontal and vertical support channels and center pads provides structural support, reduces warpage, and enhances heat dissipation by allowing for the stacking of semiconductor devices, while also offering vertical electrical interconnects and RFI/EMI shielding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductive vias and encapsulant are used for structural support and vertical electrical interconnect, then electrical functionality can be achieved, but structural support capability is limited and warpage occurs

Engineering Contradiction:
Improvestructural support capabilityVSAvoidwarpage
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

A support frame is introduced as an intermediary structure between the PCB and stacked semiconductor devices. The support frame provides rigid structural support and stability, preventing warpage while enabling vertical stacking. The frame acts as a mediator that distributes mechanical stresses and maintains alignment during the stacking process.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The support frame is constructed from rigid materials with high structural integrity, combining mechanical support functionality with electrical interconnect capabilities. This composite approach integrates structural reinforcement with electrical pathways, simultaneously addressing both support capability and warpage prevention.

Inventive Principle:
Principle #40Composite materials

2Area of stationary object

If semiconductor devices are vertically stacked to increase electrical functionality in a given footprint, then surface area utilization is improved, but heat dissipation capability deteriorates

Engineering Contradiction:
ImprovefootprintVSAvoidheat dissipation
Core Design Contradiction:
Area of stationary objectVSTemperature

Solution Approach 1:

The invention transitions from planar heat dissipation to three-dimensional heat management by incorporating vertical heat dissipation pathways through the support frame structure. The frame provides thermal conduction paths that extend vertically, allowing heat to dissipate in multiple dimensions rather than being constrained to horizontal spreading only.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If conductive vias and encapsulant are used for vertical electrical interconnect, then electrical connectivity is achieved, but support capability remains poor

Engineering Contradiction:
Improveelectrical interconnectVSAvoidsupport capability
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The support frame is designed to perform multiple functions simultaneously: providing rigid structural support, enabling vertical electrical interconnect through integrated conductive pathways, and maintaining alignment for stacked devices. This multi-functional structure replaces the limited capabilities of conductive vias and encapsulant with a comprehensive solution.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11869848B2Semiconductor device and method of stacking devices using support frame
Publication Date: 2024.01.09 STATS CHIPPAC MANAGEMENT PTE LTD
  • US11869848B2 patent drawing
  • US11869848B2 patent drawing
  • US11869848B2 patent drawing

AI summary

A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.