Semiconductor Standard Cells with Uniform Edge Cutting Depth
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Solution Overview
Problem
Semiconductor devices face challenges in achieving reliable and stable integration of standard cells with varying diffusion break regions, leading to increased area requirements and potential stress due to different cutting depths.
Innovation Solution
The semiconductor device incorporates a combination of standard cells with single and double diffusion break regions, where the edge regions are designed to have matching cutting depths or contact patterns, reducing stress and area requirements through the use of shallow trench isolation (STI) processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If standard cells with different diffusion break regions (single and double) are combined, then integration flexibility and design ease are improved, but stress and reliability issues arise due to different cutting depths
Solution Approach 1:
The patent applies local quality by making the cutting depth uniform specifically in the edge regions where standard cells are adjacent to each other, while allowing different cutting depths in the inner regions. This localized uniformity in edge regions eliminates stress issues at cell boundaries while preserving the flexibility of using different diffusion break configurations in different cell types.
Solution Approach 2:
The patent creates equipotentiality in terms of cutting depth at the interfaces between adjacent standard cells. By ensuring that edge regions have the same cutting depth regardless of whether the cells use single or double diffusion break regions, the patent eliminates potential stress differences at cell boundaries, similar to how equipotential surfaces eliminate electric field differences.
2Ease of manufacture
If standard cells with different diffusion break regions are used, then design ease is improved, but area increases due to stress mitigation requirements
Solution Approach 1:
The patent applies local quality by making the cutting depth uniform specifically in the edge regions where standard cells are adjacent to each other, while allowing different cutting depths in the inner regions. This localized uniformity in edge regions eliminates stress issues at cell boundaries while preserving the flexibility of using different diffusion break configurations in different cell types.
3Reliability
If uniform cutting depth is applied to all standard cells, then stress is reduced, but area increases and design flexibility is limited
Solution Approach 1:
The patent applies local quality by making the cutting depth uniform specifically in the edge regions where standard cells are adjacent to each other, while allowing different cutting depths in the inner regions. This localized uniformity in edge regions eliminates stress issues at cell boundaries while preserving the flexibility of using different diffusion break configurations in different cell types.
Data Source
AI summary
A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.