Spin-Coated Photosensitive Film Thickness Control for Semiconductor Steps

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Solution Overview

Problem

In semiconductor device manufacturing, the film thickness of coated films formed on semiconductor substrates is non-uniform due to the high fluidity of materials, leading to difficulties in achieving uniform heights during processing, particularly in regions with step parts.

Innovation Solution

A manufacturing method involving spin coating of photosensitive materials to form first and second pattern parts on the substrate, which are then sagged to control the fluidity of subsequent coating films, ensuring uniform film thickness and height across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a material with high fluidity is spin-coated on the semiconductor substrate to cover step parts, then the coating process is simple and efficient, but the film thickness becomes non-uniform with the central part being thicker than the outer peripheral part

Engineering Contradiction:
Improvecoating efficiencyVSAvoidfilm thickness uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies a first coating film before the second coating film to preliminarily address the thickness non-uniformity. This first coating film is specifically designed to be thicker at the outer peripheral part than at the central part, compensating for the expected thickness distribution of the subsequent second coating film. By performing this preliminary action, the patent ensures that the final multilayer coating achieves uniform overall thickness without requiring complex coating process adjustments.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent creates local quality differences by making the first coating film have different thickness characteristics in different regions of the substrate. Specifically, the first coating film is formed to be thicker at the outer peripheral part and thinner at the central part, which is the opposite of the natural spin-coating thickness distribution. This local quality variation in the first coating film compensates for the thickness non-uniformity that will occur in the second coating film, achieving uniform total thickness.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the coated film is processed by etch back to achieve uniform height, then the film height can be uniformized, but the non-uniform initial thickness makes it difficult to obtain uniform results

Engineering Contradiction:
Improvefilm height uniformityVSAvoidprocessing difficulty
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent performs the preliminary action of forming the first coating film with compensated thickness distribution before applying the second coating film. This preliminary structure preparation ensures that when the second coating film is added, the combined thickness is uniform across the substrate. As a result, subsequent etch back processing becomes straightforward and achieves uniform film height more easily, reducing processing difficulty.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the thickness parameter of the first coating film in different regions of the substrate. By controlling the first coating film to have different thicknesses at the central and outer peripheral parts, the patent creates a thickness profile that compensates for the second coating film's natural thickness distribution. This parameter change approach simplifies the etch back process and ensures uniform final film height.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If dummy electrodes and polysilicon films are formed as step parts to suppress antireflective film disappearance, then the antireflective film stability is improved, but the device structure becomes more complex

Engineering Contradiction:
Improveantireflective film stabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the function of preventing coating film disappearance from the structural elements (dummy electrodes and polysilicon films) and transfers it to the coating process design itself. Instead of relying on additional structural components to prevent antireflective film disappearance, the patent uses a multilayer coating approach where the first coating film's thickness distribution compensates for fluidity-related issues, eliminating the need for dummy structures.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the approach from modifying structural parameters (adding dummy electrodes) to modifying coating parameters (first coating film thickness distribution). By controlling the thickness parameter of the first coating film to be thicker at the outer peripheral part, the patent prevents coating material disappearance without increasing structural complexity, thus improving reliability while maintaining simple device structure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method achieves a uniform film height and improved flatness of the semiconductor device surface, reducing variations in film thickness and enabling efficient etch back processes without increasing manufacturing costs.

Implementation Method 1

a first coating film made of photosensitive material having fluidity is formed by spin coating so as to cover a plurality of step parts

Methodology Applied
Scientific EffectSpin coating: Spin Coating

Implementation Method 2

the first pattern part and the second pattern part are sagged by heating

Methodology Applied
Scientific EffectSurface tension: Surface Tension

Implementation Method 3

the first pattern part and the second pattern part are sagged by heating

Methodology Applied
Scientific EffectHeating: Heating

Data Source

PatentUS10103033B2Manufacturing method of semiconductor device
Publication Date: 2018.10.16 RENESAS ELECTRONICS CORP
  • US10103033B2 patent drawing
  • US10103033B2 patent drawing
  • US10103033B2 patent drawing

AI summary

An object of the present invention is to provide a semiconductor device including a film to be processed having a uniform height. A first coating film made of photosensitive material is formed so as to cover step parts and to become thicker in a central part of a semiconductor substrate in planar view and to become thinner in an outer peripheral part. Next, a first pattern part located on the central part side relative to the step parts and a second pattern part located on the outer peripheral part side relative to the step parts are formed. The first pattern part and the second pattern part are formed so that the occupied area of the first pattern part in planar view becomes smaller than that of the second pattern part in planar view. Next, the first pattern part and the second pattern part are sagged by heating. Next, a second coating film is formed by spin coating so as to cover the step parts.