Semiconductor Layer Layout With Stepped Insulator for Threshold Stability
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining favorable electrical characteristics and reliability, particularly with increasing screen sizes and definitions, leading to issues with wiring resistance and threshold voltage changes due to electric fields.
Innovation Solution
A semiconductor device design featuring a semiconductor layer with specific regions of varying resistances and insulating layer thicknesses, including LDD regions and a step-like insulating layer structure, to manage electric fields and improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the screen size and definition are increased, then the display performance is improved, but the wiring resistance increases
Solution Approach 1:
The patent applies local quality by creating regions with different insulating layer thicknesses within the semiconductor device. Specifically, the insulating layer has a first thickness in the channel formation region and a second thickness (greater than the first) in the LDD regions, allowing different functional requirements to be met in different locations - the thinner layer in the channel for proper electrical characteristics and the thicker layer in LDD regions for field management and reliability
2Reliability
If the insulating layer thickness is increased to manage electric fields, then the threshold voltage stability is improved, but the device structure complexity increases
Solution Approach 1:
The patent segments the insulating layer into different thickness regions - a first insulating layer with thickness in the channel formation region and a second insulating layer with greater thickness covering the LDD regions. This segmentation allows the device to meet both electrical performance requirements and field management needs without excessive overall complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design provides a semiconductor device with improved electrical characteristics and reliability by reducing wiring resistance and stabilizing threshold voltage, enhancing source-drain withstand voltage.
Implementation Method 1
a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer
Implementation Method 2
A thickness of the first insulating layer in regions overlapping with the second regions is substantially equal to a thickness of the first insulating layer in a region overlapping with the first region. A thickness of the first insulating layer in regions overlapping with the third regions is smaller than the thickness of the first insulating layer in the regions overlapping with the second regions.
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer. The semiconductor layer includes a first region, a pair of second regions, a pair of third regions, and a pair of fourth regions. The second regions sandwich the first region, the third regions sandwich the first region and the second regions, and the fourth regions sandwich the first region, the second regions, and the third regions. The first region includes a region overlapping with the first insulating layer and the conductive layer, the second regions and the third regions each include a region overlapping with the first insulating layer and not overlapping with the conductive layer, and the fourth regions overlap with neither the first insulating layer nor the conductive layer. A thickness of the first insulating layer in regions overlapping with the second regions is substantially equal to a thickness of the first insulating layer in a region overlapping with the first region. A thickness of the first insulating layer in regions overlapping with the third regions is smaller than the thickness of the first insulating layer in the regions overlapping with the second regions.