Semiconductor Device Stepped Pad Layers Void Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As the degree of integration of memory devices increases, the complexity of manufacturing processes for memory devices with vertical transistor structures grows, particularly due to the challenge of preventing void formation and pad contact defects in high-density semiconductor devices.
Innovation Solution
A semiconductor device design that includes a substrate with a memory cell region and a connection region, featuring gate electrodes, channel structures extending vertically, and pad layers arranged in a stepped form, with dummy lines and pad connection regions to enhance structural stability and prevent void formation during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the degree of integration of memory devices is increased, then the memory capacity and density are improved, but the manufacturing process complexity and difficulty increase
Solution Approach 1:
The device is divided into distinct functional regions: a memory cell region containing vertical transistor structures for high-density storage, and a connection region with planar transistor structures for control logic and I/O operations. This segmentation allows each region to be optimized independently, enabling high integration without proportionally increasing overall manufacturing complexity.
Solution Approach 2:
The patent transitions from traditional planar transistor structures to vertical transistor structures in the memory cell region. By stacking gate electrodes and channel structures in the vertical dimension, the device achieves higher memory density without proportionally increasing the manufacturing process complexity that would result from increasing planar dimensions.
2Quantity of substance
If the number of gate electrode layers stacked in the vertical direction is increased, then the memory density is improved, but the manufacturing process difficulty increases
Solution Approach 1:
The stacked gate electrode structure is segmented into multiple independently controllable gates (first gate electrode, second gate electrode, third gate electrode) that can be formed and controlled separately. This segmentation allows for more precise manufacturing control compared to forming a single thick gate structure, reducing the difficulty associated with vertical stacking.
Solution Approach 2:
Different regions of the device employ different structural configurations: the memory cell region uses vertical stacked gates for high density, while the connection region uses planar gates for ease of manufacturing. This local differentiation optimizes each region for its specific function while managing overall manufacturing complexity.
3Ease of manufacture
If voids are formed in the pad part, then the manufacturing process becomes simpler, but pad contact defects occur and electrical characteristics deteriorate
Solution Approach 1:
A pad connection region is introduced as an intermediary structure between the vertical memory cell region and the external connection pads. This intermediate region with its planar transistor structures and dedicated pad connections ensures reliable electrical contact while maintaining the simplicity of pad formation processes.
Solution Approach 2:
The pad connection region is designed and formed in advance with proper contact structures before final pad formation. This preliminary preparation ensures that when pads are formed, reliable contact pathways already exist, preventing contact defects without requiring complex void-free pad formation processes.
Data Source
AI summary
A semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and the connection region, a plurality of channel structures passing through the plurality of gate electrodes and extending in a vertical direction in the memory cell region, and a plurality of pad layers extending in a first direction from each of the plurality of gate electrodes in the connection region. The plurality of pad layers is disposed in a stepped form in a second direction. The device further includes a plurality of dummy lines arranged in one row in the first direction between two pad layers adjacent to each other in the second direction and disposed apart from one another with a pad connection region therebetween in the first direction. The pad connection region overlaps two pad layers successively disposed in the first direction.