Semiconductor Stopper Structure Reduces Parasitic Capacitance
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the increasing parasitic capacitance between pattern structures leads to decreased performance and reliability, necessitating improved structural designs to maintain and enhance reliability.
Innovation Solution
A semiconductor device with a stopper structure and method for fabricating it, including a substrate with bit line structures, storage node contact plugs, and dummy plugs, where the stopper structure is formed over the cell array edge region to prevent etch defects and reduce parasitic capacitance by forming line-shaped openings and filling them with isolation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between pattern structures is decreased to achieve higher integration, then the integration density is improved, but parasitic capacitance increases
Solution Approach 1:
A stopper structure is introduced as an intermediary element between adjacent contact plugs. This stopper structure physically separates the contact plugs and prevents direct capacitive coupling, thereby reducing parasitic capacitance while allowing the pattern structures to remain closely spaced for high integration density.
Solution Approach 2:
The space between adjacent contact plugs is segmented by introducing the stopper structure. This segmentation divides the continuous dielectric region into separate zones, isolating the electric fields of adjacent contact plugs and reducing parasitic capacitance between them.
2Ease of manufacture
If conventional etching processes are used without stopper structures, then the manufacturing process is simpler, but etch defects occur in storage node contact plugs
Solution Approach 1:
The stopper structure is formed in advance before the etching process that creates storage node contact plugs. This preliminary structure serves as a protective barrier during etching, preventing etch defects and ensuring reliable contact plug formation without complicating the overall manufacturing process.
Solution Approach 2:
The stopper structure acts as a cushioning or protective element positioned beforehand to prevent harmful effects during etching. It shields adjacent contact plugs from etch damage and ensures precise etching boundaries, thereby preventing contact plug defects.
Data Source
AI summary
Present invention is related to a semiconductor device with an improved reliability and a method for the same. A method for fabricating a semiconductor device according to an embodiment of the present invention may comprise: forming a plurality of bit line structures over a substrate; forming line-shaped openings between the bit line structures; forming a stopper structure on edges of the line-shaped openings; filling a line pattern in each of the line-shaped openings; forming a plurality of contact plugs and a plurality of isolation grooves by etching the line patterns; and filling a plug isolation layer in the isolation grooves.