Semiconductor Storage Electrode Support via Vertical Side Structures
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Solution Overview
Problem
The increasing integration density of semiconductor devices limits the formation of supporters for capacitor electrodes, leading to reduced integration and electrical characteristics due to small intervals and high vertical heights, which can result in short circuits and compromised performance.
Innovation Solution
The semiconductor devices incorporate interlayer insulating layers, contact pads, storage electrodes, upper and side supporters, and a capacitor dielectric layer to improve electrical characteristics by forming a structured capacitor design that reduces the risk of short circuits and enhances electrode support, including specific fabrication methods such as forming holes, storage barrier layers, and plate electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If supporters are formed to support the lower electrode of the capacitor, then the electrode stability is improved, but the degree of integration is limited due to required intervals
Solution Approach 1:
The patent transitions from conventional horizontal supporters to vertical side supporters that extend along the height of the storage electrode. This dimensional change allows the supporters to provide structural support without occupying horizontal space, thereby maintaining electrode stability while enabling higher integration density through reduced intervals between adjacent capacitor structures.
2Quantity of substance
If the vertical height of the lower electrode is increased, then the capacitor capacity is improved, but the risk of short circuits increases
Solution Approach 1:
The patent introduces side supporters as intermediary structures that extend vertically along the storage electrode. These side supporters act as mechanical reinforcement that prevents electrode deformation and bridge formation, enabling the use of taller electrodes for increased capacitance while maintaining reliability by preventing short circuits through improved structural support.
Solution Approach 2:
The side supporters are segmented to extend only along portions of the storage electrode height rather than covering the entire structure. This segmentation provides targeted support where it is most needed to prevent short circuits, while allowing the electrode to maintain its increased vertical height for capacitance enhancement.
3Quantity of substance
If the horizontal width of storage electrode is reduced, then the integration density is improved, but bridges between electrodes may form
Solution Approach 1:
The patent addresses bridge formation risk by introducing side supporters that extend in the vertical dimension rather than requiring increased horizontal spacing. This allows the storage electrodes to maintain reduced horizontal widths for high integration density while the vertical side supporters provide the necessary structural support to prevent bridges from forming between adjacent electrodes.
Data Source
AI summary
Provided are semiconductor devices and methods of fabricating the same. The semiconductor devices include an interlayer insulating layer on a semiconductor substrate, contact pads on the semiconductor substrate and penetrating the interlayer insulating layer, a stopping insulating layer on the interlayer insulating layer, storage electrodes on the contact pads, upper supporters between upper parts of the storage electrodes, side supporters between the storage electrodes and the upper supporters, a capacitor dielectric layer on the storage electrodes, the side supporters, and the upper supporters, and a plate electrode on the capacitor dielectric layer.