Semiconductor Storage Screening Circuit for Wiring Insulation Defects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
FLOTOX type EEPROM semiconductor storage apparatuses face issues with insulation defects between adjacent wirings, leading to incorrect data writing or reading, necessitating an efficient screening test method.
Innovation Solution
A semiconductor storage apparatus is designed with a write-voltage supply circuit, write-voltage switching circuit, bit line discharge control circuit, and bit line discharge circuit to apply voltage stress between adjacent wirings for inspection, utilizing specific circuits to generate and manage the necessary signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage stress is applied between adjacent wirings for inspection, then insulation defects can be detected, but voltage leakage may occur during normal operations
Solution Approach 1:
The patent implements preliminary action by performing screening tests during the manufacturing process before the product is released. The inspection circuit applies voltage stress to adjacent wirings to detect insulation defects early, preventing defective products from reaching customers. This resolves the contradiction by ensuring reliability through pre-detection while the switchable design prevents voltage leakage during normal operation.
Solution Approach 2:
The patent applies dynamics by making the inspection circuit switchable between active and inactive states. A switch element controls whether the inspection circuit is connected to the wiring, allowing voltage stress to be applied only during screening tests and not during normal operations. This dynamic switching resolves the contradiction by enabling defect detection when needed while preventing voltage leakage during regular use.
2Reliability
If a screening test circuit is added to detect insulation defects, then reliability improves, but device complexity increases
Solution Approach 1:
The patent applies universality by designing the inspection circuit to serve multiple functions: it can detect insulation defects between adjacent wirings, verify wiring connections, and potentially identify other manufacturing defects. By making the circuit multi-functional, the patent justifies the added complexity through enhanced reliability and versatile testing capabilities, resolving the contradiction between reliability improvement and device complexity.
Solution Approach 2:
The patent applies segmentation by dividing the inspection circuit into separate functional modules: a voltage source, a switch element, and measurement components. This modular segmentation allows each component to perform its specific function efficiently and makes the overall circuit easier to analyze, manufacture, and maintain, thereby reducing the negative impact of added complexity while maintaining reliability benefits.
3Measurement precision
If voltage stress is applied to detect insulation defects, then measurement precision improves, but energy consumption increases
Solution Approach 1:
The patent applies periodic action by implementing voltage stress only during scheduled screening tests rather than continuously. The switch element enables the inspection circuit to apply high voltage periodically during manufacturing inspection, then disconnect during normal operations. This periodic application achieves high measurement precision for defect detection while minimizing energy consumption, resolving the contradiction between measurement precision and energy use.
Data Source
AI summary
Provided is a semiconductor storage apparatus having a storage apparatus driving circuit which can efficiently perform screening tests for the semiconductor memory device. A semiconductor memory device includes a wright-voltage supply circuit, a wright-voltage switching circuit, a bit line discharge control circuit, a bit line discharge circuit, and a memory array. The wright-voltage supply circuit is connected to the memory array through the wright-voltage switching circuit. The bit line discharge control circuit is connected to the memory array through the bit line discharge circuit.