Semiconductor Storage Device Shielding Electric Field
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Solution Overview
Problem
Semiconductor storage devices, such as NAND flash memory, face reliability issues due to changes in the resistance values of N-type impurity diffusion regions caused by voltage fluctuations in conductor layers, which can affect transistor performance and device reliability.
Innovation Solution
The semiconductor storage device incorporates a configuration where electrodes surround contacts and share a common gate structure, shielding the electric field and reducing the impact of voltage changes on N-type impurity diffusion regions, thereby maintaining transistor characteristics and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductor layers are provided above N-type impurity diffusion regions, then device functionality is improved, but voltage fluctuations in conductor layers cause resistance value changes in N-type impurity diffusion regions, deteriorating transistor reliability
Solution Approach 1:
A ground potential layer is introduced as an intermediary between the conductor layer and the N-type impurity diffusion region. This ground potential layer acts as a shield that intercepts voltage fluctuations from the conductor layer, preventing them from affecting the N-type impurity diffusion region and thus maintaining transistor reliability
Solution Approach 2:
The invention converts the harmful voltage fluctuations in conductor layers into a beneficial shielding effect by introducing ground potential layers. The voltage fluctuations that would normally harm the N-type impurity diffusion region are instead channeled to the ground potential layer, which dissipates them harmlessly
2Reliability
If electrodes surround contacts to shield electric field, then resistance value stability is improved, but device structure becomes more complex
Solution Approach 1:
The electrode structure is merged with the ground potential layer. Instead of adding separate shielding electrodes, the ground potential layer itself is configured to surround the contacts, combining the grounding function with the shielding function in a single integrated structure
Solution Approach 2:
The ground potential layer serves multiple functions simultaneously: it provides a reference potential, shields the N-type impurity diffusion region from voltage fluctuations, and surrounds the contacts to stabilize resistance values. This multi-functionality reduces the need for additional dedicated shielding structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces changes in resistance values and maintains transistor reliability by shielding the electric field, while also minimizing the aspect ratio of contacts and reducing the size of the semiconductor storage device.
Implementation Method 1
electrodes surround contacts and share a common gate structure, shielding the electric field and reducing the impact of voltage changes on N-type impurity diffusion regions
Data Source
AI summary
A semiconductor storage device includes a semiconductor substrate including a first region, a second region, and a third region, located apart from each other in such an order in a first direction in an element region. Each of the first to third regions including a source and/or drain region. The semiconductor storage device further includes a first conductor layer provided above the element region and having a first opening; a second conductor layer provided above the element region, having a second opening, and located apart from the first conductor layer in the first direction; a first contact, in the first opening, that is connected to the first region; a second contact, in the second opening, that is connected to the third region; a first memory cell connected to the first contact; and a second memory cell connected to the second contact.