Semiconductor Storage Device Columnar Part Alignment via Stopper Material
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor storage devices face challenges in achieving high-density memory cell formation and reducing chip size due to issues with columnar part formation, such as positional displacement and enlarged inner diameters of memory holes, which affect the reliability and efficiency of memory cell density and device compactness.
Innovation Solution
The semiconductor storage device employs a method where bottom memory holes and lower memory holes are formed with stopper materials to maintain precise dimensions, allowing for the reliable connection of columnar parts and preventing unnecessary expansion of inner diameters, thereby supporting high-density memory cell formation and reduced chip size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If columnar parts are formed without stopper materials, then manufacturing process is simpler, but inner diameters of memory holes become enlarged and positional displacement occurs
Solution Approach 1:
A stopper material is introduced as an intermediary component during the formation of columnar parts. This stopper material temporarily occupies the memory hole space to prevent enlargement and maintain precise inner diameters. After the columnar part is formed, the stopper material is removed, leaving the precisely dimensioned memory hole ready for receiving the columnar part.
Solution Approach 2:
The stopper material is placed in advance into the memory hole before forming the columnar part. This preliminary action prevents the inner diameter of the memory hole from enlarging during the columnar part formation process and maintains precise positional alignment, thereby resolving the precision issues without complicating the overall manufacturing flow.
2Ease of manufacture
If memory hole inner diameters are enlarged, then columnar parts can be easier to form, but memory cell density decreases and chip size increases
Solution Approach 1:
The stopper material acts as a spacer that defines the precise inner diameter of the memory hole. By preventing unnecessary enlargement, it ensures that memory holes maintain their designed dimensions, allowing for higher density arrangement of memory cells on the chip while still enabling successful columnar part formation.
3Device complexity
If positional displacement of columnar parts occurs, then manufacturing is less complex, but connection reliability deteriorates
Solution Approach 1:
The stopper material serves as a positional reference and guide during columnar part formation. It ensures that the columnar part is formed at the correct position with proper alignment, preventing positional displacement. After removal, the memory hole maintains its precise position, ensuring reliable connection between the columnar part and surrounding structures.
Data Source
AI summary
A semiconductor storage device according to an embodiment includes a substrate, an interconnection layer region, a multi-layered body, a semiconductor body, and a columnar part. The multi-layered body has an end portion facing the interconnection layer region as an end portion in the first direction. The columnar part includes a first portion and a second portion, the first portion is at the end portion of the multi-layered body, the second portion is closer to the substrate than the first portion is. The first portion has a center. The second portion has a center. The center of the second portion in a second direction is displaced in the second direction with respect to the center of the first portion in the second direction. The second direction crosses the first direction.