Semiconductor Storage Device Voltage Generation Circuit Equalization
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Solution Overview
Problem
In semiconductor storage devices with three-dimensionally arranged memory cells, the large load capacitance of word lines increases the drive current required to raise voltages to target levels, hindering operation speed.
Innovation Solution
A voltage generation circuit with regulators and an equalization circuit that manage the connection and disconnection of voltage lines based on analog signals from the regulators, ensuring stable and timely voltage boosting to target levels, reducing delays and dents in voltage waveforms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the drive current is increased to raise voltages to target levels quickly, then the operation speed is improved, but the load capacitance of word lines increases the power consumption and heat generation
Solution Approach 1:
The voltage generation circuit performs preliminary voltage generation and equalization before the actual read/write operation. The first and second voltages are generated and equalized in advance, ensuring that the word lines are ready to receive data without requiring excessive drive current during the critical operation phase, thus improving operation speed while controlling power consumption.
2Speed
If the voltage is raised quickly to target levels, then the operation speed is improved, but voltage waveform delays and dents occur
Solution Approach 1:
An equalization circuit is introduced as an intermediary between the voltage generation circuit and the word lines. This equalization circuit receives the first and second voltages, equalizes them to the same level, and then supplies the equalized voltage to the word lines. This intermediary mechanism ensures smooth voltage transitions without delays or dents, maintaining voltage waveform stability while achieving fast voltage rising speed.
3Measurement precision
If multiple voltage lines are managed independently, then the voltage control precision is improved, but the device complexity increases
Solution Approach 1:
The voltage generation circuit merges the management of multiple voltage lines by generating a first voltage and a second voltage that are then equalized to the same level before being supplied to different word lines. This combining approach maintains precise voltage control for each line while reducing the overall circuit complexity compared to completely independent voltage generation circuits for each line.
Data Source
AI summary
A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.