Semiconductor Block Strain Tuning by Creep Before Recrystallization
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Solution Overview
Problem
Existing methods for modifying the state of strain in semiconducting materials are limited in their ability to effectively relax or increase strain in semiconducting blocks, particularly in microelectronic components like transistors, without recrystallizing the material, which can affect device performance.
Innovation Solution
A method involving creep annealing of a semiconducting block's lower region at a temperature between 300° C. and 400° C. to allow creep without recrystallization, followed by recrystallization using the upper region as a germ, allowing for strain modification without direct recrystallization of the lower region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a lower region of a semiconducting block is made amorphous and then recrystallized directly, then the strain state can be modified, but the control precision over strain is insufficient
Solution Approach 1:
The patent applies a preliminary creep annealing treatment before recrystallization to partially relax the strain in the amorphous lower region. This preliminary action modifies the strain state in a controlled manner, allowing for better strain control precision during subsequent recrystallization without requiring complex additional process steps
Solution Approach 2:
The patent changes the physical parameters (temperature and time) of the annealing process to achieve creep without complete recrystallization. By carefully controlling these parameters, the strain state can be precisely adjusted before the final recrystallization step, improving strain control precision
2Reliability
If the temperature is increased to enable creep, then strain relaxation is improved, but recrystallization may occur which affects device performance
Solution Approach 1:
The patent optimizes the annealing temperature and time parameters to achieve creep without triggering unwanted recrystallization. By carefully controlling these parameters, the process enables effective strain relaxation while maintaining the crystalline structure integrity, thus improving device performance
Solution Approach 2:
The patent applies a partial annealing treatment that achieves the desired creep effect without excessive heating that would cause complete recrystallization. This partial action approach allows strain relaxation while preserving the beneficial crystalline structure, improving device reliability
3Productivity
If strain is applied to improve transistor performance, then electron speed or hole conduction increases, but the strain state becomes difficult to control locally
Solution Approach 1:
The patent segments the semiconducting block into different regions (amorphous lower region and crystalline upper region) with potentially different strain states. This segmentation allows for independent strain control in different areas, enabling local strain optimization for different transistor types (N-type and P-type) while maintaining overall device performance
Solution Approach 2:
The patent applies different strain states to different local regions of the semiconducting block. The amorphous lower region can have its strain state independently controlled through the creep annealing process, allowing local quality optimization for specific device requirements without affecting the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables more precise control over the strain state of semiconducting materials, allowing for the relaxation, straining, or increased strain in semiconducting blocks, thereby improving the performance of microelectronic components like transistors.
Implementation Method 1
making at least one creep annealing with a duration and a temperature adapted to enable creep of the lower region without recrystallizing the material of this lower region
Implementation Method 2
making at least one recrystallization annealing of the lower region
Data Source
AI summary
A method is provided for modifying a strain state of a block of a semiconducting material including steps in the following order: a) making a lower region of the block of the semiconducting material resting on a substrate amorphous, while a crystalline structure of an upper region of the block in contact with the lower region is maintained, then b) forming a stressing zone on the block of the semiconducting material, then c) making at least one creep annealing with a suitable duration and temperature to enable creep of the lower region without recrystallizing a material of the lower region, and then d) making at least one recrystallization annealing of the lower region of the block.