Semiconductor Stress Layer Offset for Carrier Mobility
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Solution Overview
Problem
Conventional dual etch-stop layers used in semiconductor devices to generate compressive or tensile stress can degrade the performance of these devices, necessitating an optimized arrangement of tensile and compressive layer regions to enhance carrier mobility within channel regions.
Innovation Solution
The integration of tensile and compressive layer regions in semiconductor devices, where the layers are strategically positioned and offset relative to the channel region in both lateral and transverse directions, with specific materials like oxides, nitrides, or oxynitrides, and deposited using techniques such as PECVD to control stress levels, while using isolation regions with varying stress types and distances to optimize performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If conventional dual etch-stop layers are used to generate compressive or tensile stress, then stress can be applied to channel regions, but device performance degrades
Solution Approach 1:
The patent divides the stress application into separate tensile and compressive layer regions that are spatially segmented and offset from each other. This segmentation allows different regions to experience different stress types without the negative interactions that occur with conventional dual etch-stop layers, thereby maintaining device performance while achieving stress enhancement.
Solution Approach 2:
The patent applies different stress characteristics (tensile vs. compressive) to different local regions of the semiconductor device. By creating tensile layer regions and compressive layer regions with offset configurations, each region receives optimized stress treatment tailored to its specific requirements, improving overall device performance without degradation.
2Stress or pressure
If tensile and compressive layers are positioned closer to channel region, then stress effect increases, but device performance may degrade due to improper stress distribution
Solution Approach 1:
The patent employs asymmetric positioning of tensile and compressive layers relative to the channel region. The layers are offset from each other in a controlled manner, creating an asymmetric stress distribution pattern that maximizes the beneficial stress effect on carrier mobility while avoiding the performance degradation that results from symmetric or improperly distributed stress configurations.
Solution Approach 2:
The patent extends the stress application beyond a single plane by positioning tensile and compressive layers at different lateral offsets and potentially different vertical positions. This multi-dimensional arrangement allows optimization of stress distribution in both lateral and vertical dimensions, enhancing carrier mobility while maintaining device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances carrier mobility by optimizing stress distribution, leading to improved performance of semiconductor devices by balancing and maximizing tensile and compressive stresses across different regions.
Implementation Method 1
deposited using techniques such as PECVD to control stress levels
Implementation Method 2
a first region of the isolation region is under a stress of a first type, wherein the second region of the isolative region is one of under a lesser stress of the first type or of under a stress of a second type being opposite of the first type
Data Source
AI summary
An integrated circuit includes a device including an active region of the device, where the active region of the device includes a channel region having a transverse and a lateral direction. The device further includes an isolation region adjacent to the active region in a traverse direction from the active region, where the isolation region includes a first region located in a transverse direction to the channel region. The isolation region further includes a second region located in a lateral direction from the first region. The first region of the isolation region is under a stress of a first type and the second region of the isolative region is one of under a lesser stress of the first type or of under a stress of a second type being opposite of the first type.