Semiconductor Device Stress Relief Plate Structure
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Solution Overview
Problem
Semiconductor devices with alternately stacked conductive and insulating films are prone to stress from interlayer insulating films due to thermal expansion and shrinkage differences, leading to potential electrical disconnection or short-circuiting, which reduces yield and increases manufacturing failures.
Innovation Solution
Incorporating a structure with a plate-shaped portion extending between circuit blocks in the peripheral circuit region to alleviate stress from the interlayer insulating film, improving the semiconductor device's yield and reducing malfunction by dividing the interlayer insulating film into regions and acting as a barrier against stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of layers in the stacked body is increased to achieve higher integration, then the integration level is improved, but the stress from thermal expansion and shrinkage differences between conductive and insulating films increases, leading to electrical disconnection or short-circuiting
Solution Approach 1:
The patent divides the interlayer insulating film into multiple regions using groove structures. These grooves segment the continuous insulating film into discrete sections, allowing each segment to independently manage thermal stress. This segmentation prevents stress accumulation across the entire stacked body while maintaining electrical insulation, thus enabling higher integration without compromising connection stability.
Solution Approach 2:
The groove structures act as intermediary elements between the conductive films and insulating films. These grooves provide stress relief zones that mediate the thermal expansion and shrinkage differences between alternating conductive and insulating layers. By introducing these intermediary groove structures, the patent allows the stacked body to accommodate thermal stress without causing electrical disconnection or short-circuiting.
2Productivity
If the stacked body structure is used to increase integration, then the integration level is improved, but stress from interlayer insulating film causes manufacturing failures and reduces yield
Solution Approach 1:
The interlayer insulating film is segmented into multiple regions through groove structures. This segmentation allows each region to be manufactured and stressed independently, reducing the likelihood of manufacturing failures across the entire device. The grooves create isolated zones that prevent stress propagation, thereby improving overall manufacturing yield while maintaining high integration.
Solution Approach 2:
The groove structures are designed in advance to provide cushioning against thermal stress before it can cause manufacturing failures. By pre-introducing these stress-relief grooves into the interlayer insulating film, the patent prepares the structure to accommodate thermal expansion and shrinkage differences, preventing manufacturing defects and improving yield during the manufacturing process.
3Productivity
If the stacked body with alternately disposed conductive and insulating films is used, then the integration level is improved, but stress accumulation leads to post-manufacturing malfunctions
Solution Approach 1:
The groove structures segment the interlayer insulating film into multiple independent regions. This segmentation prevents stress accumulation across the entire stacked body by creating discrete zones that can expand and contract independently. As a result, the structural composition remains stable over time, preventing post-manufacturing malfunctions while maintaining high integration levels.
Solution Approach 2:
The grooves serve as intermediary stress-relief zones between the conductive and insulating films. These intermediaries allow each layer to accommodate thermal stress independently, preventing stress accumulation that would otherwise lead to structural instability. The groove structures thus maintain the long-term structural stability of the high-integration stacked body.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces stress on the stacked bodies, minimizing electrical disconnection and short-circuiting, thereby enhancing the semiconductor device's yield during manufacturing and reducing post-manufacturing malfunctions.
Implementation Method 1
prone to stress from interlayer insulating films due to thermal expansion and shrinkage differences
Implementation Method 2
prone to stress from interlayer insulating films due to thermal expansion and shrinkage differences
Data Source
AI summary
According to one embodiment, there is provided a semiconductor device including a stacked body, a semiconductor columnar member, an insulating film, and a structure. The stacked body is disposed above a semiconductor substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. The semiconductor columnar member penetrates the stacked body in the stacking direction. The insulating film surrounds the semiconductor columnar member and penetrates the stacked body in the stacking direction. The structure is disposed in a peripheral circuit region on the semiconductor substrate. The peripheral circuit region is a region including a plurality of circuit blocks. The structure has a plate-shaped portion extending at least between the plurality of circuit blocks.