3D Semiconductor Memory Thin Film Stress Control
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Solution Overview
Problem
Current three-dimensional semiconductor devices face limitations in manufacturing cost and reliability due to the need for expensive equipment for fine pattern formation, which restricts the integration level and increases costs per bit, making mass production challenging.
Innovation Solution
The method involves forming a thin film structure with alternately stacked first and second material layers on a substrate, applying stress in specific ranges to alleviate warpage and prevent cracks, and using nitrous oxide for oxide layer deposition to minimize particle occurrence, thereby improving manufacturing productivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If expensive equipment is used for fine pattern formation to increase integration level, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies parameter changes by controlling stress parameters in thin film layers. By adjusting the stress applied by alternating material layers (first and second material layers with different stress characteristics), the patent achieves better substrate flatness and reduces warpage without requiring expensive fine pattern formation equipment. This allows mass production at lower costs while maintaining integration levels.
2Ease of manufacture
If substrate warpage is not controlled, then manufacturing process is simpler, but manufacturing precision deteriorates
Solution Approach 1:
The patent implements beforehand cushioning by pre-controlling substrate warpage through the thin film structure design. Alternating layers of first and second material layers are deposited with specific stress characteristics to compensate for and prevent substrate warpage before subsequent manufacturing steps. This proactive approach maintains substrate flatness throughout the manufacturing process without adding complex corrective steps.
3Reliability
If nitrous oxide is used for oxide layer deposition, then reliability is improved by minimizing particles, but manufacturing cost increases
Solution Approach 1:
The patent applies parameter changes by modifying the deposition process parameters - specifically using nitrous oxide as the oxygen source gas during oxide layer deposition. This parameter change minimizes particle generation during the deposition process, thereby improving device reliability and electrical characteristics. While nitrous oxide may have different cost implications compared to other gases, the overall manufacturing cost is balanced by reduced rework and higher yield from improved reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces substrate warpage, minimizes process errors, and enhances the reliability and electrical characteristics of three-dimensional semiconductor devices, facilitating more efficient and cost-effective mass production.
Implementation Method 1
the first material layer applies a stress in a range of about 0.1×10^9 dyne/cm^2 to about 10×10^9 dyne/cm^2 to the substrate and the second material layer applies a stress in a range of about −0.1×10^9 dyne/cm^2 to about −10×10^9 dyne/cm^2 to the substrate
Implementation Method 2
an oxygen gas used to deposit the oxide layers includes nitrous oxide
Data Source
AI summary
Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm2 to about 10×109 dyne/cm2 to the substrate and the second material layer applies a stress in a range of about −0.1×109 dyne/cm2 to about −10×109 dyne/cm2 to the substrate.