Semiconductor String Gate Impurity Concentration Control
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Solution Overview
Problem
Semiconductor devices with small channel lengths are prone to short-channel effects, reducing their reliability and making it challenging to achieve high-density semiconductor devices that operate stably.
Innovation Solution
A semiconductor device design featuring a ground selection gate and a string selection gate with memory gates in between, where the channels of the selection gates have a higher impurity concentration than the memory gates, and the active region is doped to create selection channel regions with a higher impurity concentration than the memory cell regions, ensuring the same conductivity type.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel length of the gate electrode is reduced to increase device density, then the device density is improved, but short-channel effects increase and reliability deteriorates
Solution Approach 1:
The patent applies local quality by creating distinct impurity concentration zones within the channel region. The selection channel region has a higher impurity concentration than the memory channel region, allowing different functional characteristics in different parts of the same channel structure. This local differentiation enables the selection transistor to have better channel control while maintaining high device density through the overall short channel design.
2Reliability
If the impurity concentration in the selection channel region is increased to improve channel control, then the channel control is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent segments the channel region into two distinct zones: a selection channel region with higher impurity concentration and a memory channel region with lower impurity concentration. This segmentation is achieved through selective doping processes that treat different spatial regions differently. The segmentation allows independent optimization of each region's electrical characteristics without requiring complex multi-step doping sequences, as the impurity introduction can be achieved through standard selective implantation or diffusion techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the stability and reliability of high-density semiconductor devices by reducing short-channel effects and improving the performance of memory systems.
Implementation Method 1
the channels of the selection gates have a higher concentration of impurities than the channel of at least one of the memory gates
Data Source
AI summary
A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.