Semiconductor Structure With Protected Substrate Thinning
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Solution Overview
Problem
Current three-dimensional integration technologies for wafer level packaging face challenges in size reduction, high-performance interconnects, and heterogeneous integration, particularly in controlling etching processes to prevent damage to inner structures during substrate thinning.
Innovation Solution
The method involves forming a protection layer on a substrate to prevent damage during etching by using an etchant with selective etching properties, allowing for controlled thinning of one substrate while protecting the other, and using hybrid bonding techniques with intermetallic compounds to enhance bonding and alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If substrate thinning is performed using conventional etching methods, then substrate thickness is reduced, but inner structures may be damaged due to lack of protection
Solution Approach 1:
A protection layer is introduced as an intermediary between the etchant and the inner structures. This protection layer selectively protects certain regions during the thinning process, allowing the substrate to be thinned while preventing damage to sensitive inner structures. The protection layer acts as a mediator that enables the etching process to proceed without compromising structural integrity.
Solution Approach 2:
The protection layer is formed prior to the thinning process, establishing a protective barrier in advance. This preliminary action ensures that when the etching begins, the inner structures are already protected, preventing damage before it can occur. The protection layer is strategically positioned and formed to cover vulnerable areas before the thinning operation commences.
2Adaptability or versatility
If heterogeneous integration is implemented to achieve high-density integration, then integration capability is improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is divided into distinct segments: forming the protection layer, performing the thinning process, and selectively removing the protection layer. This segmentation allows each step to be optimized independently and simplifies the overall manufacturing complexity by breaking down the heterogeneous integration process into manageable, sequential operations that can be controlled and monitored separately.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise thinning of substrates without damaging the inner structures, improving the quality of semiconductor packages and reducing manufacturing costs and time, while also facilitating high-density integration and efficient interconnects.
Implementation Method 1
using an etchant with selective etching properties, allowing for controlled thinning of one substrate while protecting the other
Implementation Method 2
forming a protection layer on a substrate to prevent damage during etching
Implementation Method 3
using hybrid bonding techniques with intermetallic compounds to enhance bonding and alignment
Data Source
AI summary
A semiconductor structure includes a semiconductor substrate, a first electrical connector, a first electrical connector and a dielectric material. The semiconductor substrate has a first surface and a second surface opposite to the first surface. The first electrical connector is disposed over the first surface of the semiconductor substrate. The second electrical connector is electrically connected to the first electrical connector, and the first electrical connector surrounds the second electrical connector. The dielectric material is disposed between the first electrical connector and the second electrical connector.