Semiconductor Structure Sidewall Oxide Stress Management
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Solution Overview
Problem
The annealing process in semiconductor manufacturing induces stress, leading to pattern scattering and shifts in active area patterns, which can be mitigated by enlarging pattern dimensions, but this results in increased integrated circuit size, necessitating a more efficient solution.
Innovation Solution
A method involving the formation of a semiconductor structure with a first oxide structure on the sidewall of the semiconductor material and a second oxide structure in the trench, using thermal oxidation and flowable chemical vapor deposition processes to manage stress and prevent pattern shifts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an annealing process is performed to form oxide structure surrounding the active area, then the oxide structure is formed, but stress is increased causing active area pattern scattering and shift
Solution Approach 1:
The oxide structure is divided into two separate oxide structures formed at different locations. The first oxide structure is formed on the sidewall of the semiconductor material structure through oxidation, while the second oxide structure is formed in the trench through deposition. This segmentation allows stress management while maintaining pattern alignment precision.
Solution Approach 2:
The first oxide structure formed on the sidewall acts as an intermediary layer between the semiconductor material structure and the second oxide structure in the trench. This intermediary structure helps manage stress distribution and prevents pattern scattering during the annealing process.
2Manufacturing precision
If pattern dimension is enlarged to solve pattern scattering, then pattern scattering is reduced, but the size of the integrated circuit is adversely enlarged
Solution Approach 1:
Instead of solving pattern scattering by enlarging the horizontal pattern dimensions, the solution moves to another dimension by forming oxide structures on sidewalls and in trenches. This vertical/dimensional approach manages stress without increasing the integrated circuit footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively releases stress, prevents pattern shifts, and improves semiconductor structure performance by maintaining pattern alignment and precision without enlarging the integrated circuit size.
Implementation Method 1
An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure
Implementation Method 2
the second oxide structure is performed by a flowable chemical vapor deposition process
Data Source
AI summary
A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.