Semiconductor Substrate with Aluminum Support and Oxide Insulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices, particularly LEDs, face heat dissipation challenges that degrade their optical efficiency and lifespan, and existing solutions are costly and complex to manufacture.
Innovation Solution
A substrate with a metal support part made of aluminum, insulated by aluminum oxide layers, and metal lines made of aluminum or copper, which facilitates efficient heat transfer and electrical connectivity, allowing for simplified manufacturing and improved device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional substrate structures are used for LED mounting, then manufacturing is simpler, but heat dissipation characteristics deteriorate
Solution Approach 1:
The substrate employs a composite structure combining a metal support part (aluminum) with insulating parts (aluminum oxide). This composite material approach enables effective heat dissipation through the metal component while maintaining electrical insulation through the oxide layer, resolving the contradiction between heat dissipation performance and structural complexity.
Solution Approach 2:
The substrate is divided into distinct functional segments: a metal support part for heat dissipation and separate insulating parts for electrical isolation. This segmentation allows each component to optimize its specific function, with the metal part handling thermal management and the insulating parts managing electrical properties, thereby improving heat dissipation without excessive overall complexity.
2Temperature
If advanced heat dissipation structures are implemented, then thermal management improves, but manufacturing cost increases
Solution Approach 1:
The aluminum support part naturally forms aluminum oxide through oxidation, creating the insulating layer without requiring separate manufacturing steps. This self-service property reduces manufacturing complexity and cost while maintaining effective heat dissipation through the metal support structure.
Solution Approach 2:
The invention utilizes the natural oxidation properties of aluminum to create insulating layers with controlled thickness and properties. By controlling oxidation parameters rather than requiring complex deposition processes, the manufacturing cost is reduced while achieving the necessary electrical insulation and thermal management.
3Area of stationary object
If metal lines are placed closer together to reduce substrate size, then device compactness improves, but electrical insulation reliability deteriorates
Solution Approach 1:
Insulating parts made of aluminum oxide are positioned between adjacent metal lines and between metal lines and the metal support part. These intermediary insulating structures enable closer spacing of conductive elements while maintaining reliable electrical insulation, thus reducing substrate area without compromising electrical reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The substrate effectively enhances heat dissipation and electrical characteristics of semiconductor devices, extending their lifespan and reducing manufacturing costs through a simplified process.
Implementation Method 1
The metal support part is formed of aluminum... effectively enhances heat dissipation
Implementation Method 2
The first insulating part is disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part
Data Source
AI summary
A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal line is electrically connected to a second electrode of the semiconductor device and spaced apart from the first metal line. The metal support part is disposed between the first metal line and the second metal line. The first insulating part is disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part. The second insulating part is disposed between the second metal line and the metal support part and configured to electrically insulate the second metal line from the metal support part.