Semiconductor Substrate Bonding with Diffusion Barrier
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Solution Overview
Problem
Existing semiconductor device fabrication methods fail to ensure sufficient bonding strength between substrates while preventing electrode material diffusion into insulating films, leading to reliability issues in three-dimensional semiconductor structures.
Innovation Solution
A semiconductor device is fabricated using substrates with electrodes embedded in insulating films made from diffusion-preventing materials, where the electrodes are polished until the insulating films are exposed, ensuring bonding strength and preventing material diffusion, and an interface barrier is provided to enhance electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrodes are embedded in insulating films using conventional polishing methods, then electrode connections are formed, but electrode material diffuses into the insulating films causing reliability issues
Solution Approach 1:
A barrier metal layer is introduced as an intermediary between the electrode material and the insulating film. This barrier layer prevents direct contact and diffusion between the electrode material and insulating film, while still allowing the electrode to be embedded and connected. The barrier metal layer acts as a mediator that enables the embedding process without causing harmful material diffusion.
2Ease of manufacture
If polishing is performed to embed electrodes, then electrode connections are achieved, but bonding strength between substrates is insufficient
Solution Approach 1:
The barrier metal layer is formed on the insulating film surface before the electrode material is deposited. This preliminary action ensures that when polishing occurs, the barrier layer is already in place to prevent material diffusion. Additionally, the barrier layer provides a stable surface that enhances bonding strength between substrates during the subsequent lamination and heat treatment processes.
3Object-generated harmful factors
If barrier metal layer is added to prevent diffusion, then material diffusion is prevented, but manufacturing complexity increases
Solution Approach 1:
The barrier metal layer is designed with specific thickness parameters that optimize both diffusion prevention and process simplicity. By controlling the barrier layer thickness to be sufficient for diffusion prevention but not excessively thick, the fabrication process remains manageable. The barrier layer parameters are optimized to provide adequate protection without requiring complex multi-layer structures or additional processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves enhanced bonding strength and reliability by preventing electrode material diffusion into insulating films, ensuring stable electrical connections and improved performance in three-dimensional semiconductor structures.
Implementation Method 1
insulating films made from diffusion-preventing materials
Implementation Method 2
heat treatment is carried out. Bonding of the substrates between which the electrodes are joined together is carried out thereby
Data Source
AI summary
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.