Semiconductor Substrate Bonding via Polymer Adhesive Melting
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Solution Overview
Problem
In semiconductor device manufacturing, achieving good electrical reliability in stacked structures is challenging due to the need for precise bonding of conductive patterns and insulating interlayers, which often results in poor electrical connectivity and reliability.
Innovation Solution
A method involving the formation of conductive pattern structures with protrusions on substrates, covered by bonding insulation layers and filled with polymer adhesive patterns, which are then melted to bond the substrates together, ensuring contact between conductive patterns and enhancing electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates with conductive patterns and insulating interlayers are bonded to form a stacked structure, then integration degree is increased, but electrical reliability deteriorates due to poor bonding quality
Solution Approach 1:
A bonding insulation layer is introduced as an intermediary between the conductive patterns of adjacent substrates. This bonding insulation layer includes a recess that receives adhesive, enabling reliable bonding while maintaining electrical connectivity. The intermediary structure resolves the contradiction by providing a dedicated bonding interface that ensures both mechanical strength and electrical reliability in stacked semiconductor devices.
2Reliability
If conductive patterns are directly bonded to ensure electrical connectivity, then electrical reliability improves, but manufacturing precision deteriorates due to alignment difficulties
Solution Approach 1:
The bonding insulation layer acts as a mediator between conductive patterns, providing a tolerance buffer for alignment variations. The recess structure in the bonding insulation layer accommodates adhesive while maintaining a planar bonding surface, allowing for reliable electrical connectivity even when substrates have minor misalignments during the bonding process.
Solution Approach 2:
The bonding insulation layer changes the physical parameters of the bonding interface by providing a planar surface with a controlled recess depth. This parameter change allows the adhesive to be contained within the recess, ensuring consistent bonding quality and electrical connectivity regardless of minor variations in substrate alignment or surface flatness.
3Strength
If adhesive is applied to bond substrates, then bonding strength improves, but metal diffusion increases compromising electrical reliability
Solution Approach 1:
The bonding insulation layer provides localized quality differentiation by creating a recess that confines adhesive to specific regions. This local quality control ensures that adhesive makes good contact for strong bonding while the insulating material of the bonding layer itself acts as a barrier to prevent metal diffusion between adjacent conductive patterns, thus resolving the contradiction between bonding strength and preventing harmful metal diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the electrical reliability and bonding strength of semiconductor devices by ensuring direct contact between conductive patterns and preventing metal diffusion, while allowing for misalignment of substrates during bonding.
Implementation Method 1
The first and second adhesive patterns may be heated to be melted
Implementation Method 2
The first and second substrates are bonded with each other so that the first and second conductive pattern structures contact with each other
Implementation Method 3
A first bonding insulation layer pattern is formed on the first insulating interlayer. The first bonding insulation layer pattern covers the portion of the first conductive pattern structure protruding from the first insulating interlayer
Data Source
AI summary
In a method for fabricating a semiconductor, a first conductive pattern structure partially protruding upwardly from first insulating interlayer is formed in first insulating interlayer. A first bonding insulation layer pattern covering the protruding portion of first conductive pattern structure is formed on first insulating interlayer. A first adhesive pattern containing a polymer is formed on first bonding insulation layer pattern to fill a first recess formed on first bonding insulation layer pattern. A second bonding insulation layer pattern covering the protruding portion of second conductive pattern structure is formed on second insulating interlayer. A second adhesive pattern containing a polymer is formed on second bonding insulation layer pattern to fill a second recess formed on second bonding insulation layer pattern. The first and second adhesive patterns are melted. The first and second substrates are bonded with each other so that the conductive pattern structures contact each other.