Semiconductor Substrate Conductive Films Uniform Etching
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Solution Overview
Problem
The existing methods for manufacturing large-area SOI substrates face inefficiencies due to the need for precise alignment and separation of silicon substrates, leading to non-uniform film thickness and increased panel costs, as the exposure of insulating substrate surfaces between semiconductor thin films results in potential differences and uneven etching during the etch-back process.
Innovation Solution
A semiconductor substrate configuration with an insulating substrate and conductive films between semiconductor thin films, which suppresses the exposure of the insulating substrate surface, allowing for uniform etching and desired film thickness across the substrate, thereby improving panel efficiency and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If multiple silicon substrates are arranged and bonded on a large glass substrate using conventional methods, then large-area SOI substrates can be manufactured, but the substrates require precise alignment and separation which leads to non-uniform film thickness and increased costs
Solution Approach 1:
The invention divides the large substrate processing into multiple smaller substrate regions, each with its own support mechanism. This segmentation allows independent control and processing of each substrate region, preventing the alignment and separation issues that affect film thickness uniformity in conventional large-substrate processing.
Solution Approach 2:
The invention introduces conductive films between the semiconductor thin films and the insulating substrate to equalize the electrical potential across the substrate surface. This equipotentiality prevents potential differences that would otherwise cause non-uniform etching and film thickness variations during the etch-back process.
2Device complexity
If the insulating substrate surface is exposed between semiconductor thin films, then substrate structure is simplified, but potential differences occur causing non-uniform etching during etch-back process
Solution Approach 1:
The conductive films are strategically placed between the semiconductor thin films and the insulating substrate to create equipotential regions. This eliminates the potential differences that would otherwise exist on the exposed insulating substrate surface, ensuring uniform etching rates across the entire substrate during the etch-back process.
Solution Approach 2:
The conductive films act as intermediary elements between the semiconductor thin films and the insulating substrate. These intermediaries equalize the electrical potential and prevent direct exposure of the insulating substrate surface, thereby eliminating the source of non-uniform etching while maintaining structural simplicity.
3Productivity
If silicon substrates are arranged in line on a tray for collective bonding, then manufacturing efficiency increases, but alignment precision decreases leading to separation issues
Solution Approach 1:
The tray is divided into multiple independent substrate arrangement regions, each with its own support mechanism. This segmentation allows substrates in each region to be independently positioned and supported, maintaining alignment precision even when multiple substrates are processed collectively, thereby enabling both high efficiency and high precision.
Solution Approach 2:
Instead of requiring perfect alignment across the entire tray, the invention provides excessive support by introducing additional support mechanisms in each substrate region. This partial support approach ensures that even if overall alignment is not perfect, each substrate receives adequate support to prevent separation and maintain positioning accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables uniform thinning of semiconductor thin films up to the peripheral portions, enhancing panel obtainment efficiency and reducing yield loss, while maintaining uniform film thickness and reducing circuit design margin fluctuations.
Implementation Method 1
a conductive film which is arranged between the semiconductor thin films... suppresses the exposure of the insulating substrate surface... allowing for uniform etching
Implementation Method 2
uniform thinning of semiconductor thin films up to the peripheral portions... uniform etching and desired film thickness
Data Source
AI summary
A semiconductor substrate (41) includes an insulating substrate (30), a plurality of semiconductor thin films (46) which are arranged on the insulating substrate (30) to be separated from each other, and a conductive film (33) which is arranged between the semiconductor thin films (46). Therefore, it is possible to uniformly thin the film thickness of each of the semiconductor thin films.