Semiconductor Substrate Cooling Channels for Heat Dissipation
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Solution Overview
Problem
Semiconductor devices generate heat during operation, which degrades electrical performance and causes reliability issues, and as technology advances with greater integration demands, heat management becomes increasingly exacerbated.
Innovation Solution
Incorporating a substrate with a channel for heat dissipation, featuring varying volumes and depths, and a dielectric layer to facilitate fluid flow for effective heat absorption and removal, with openings connecting the channel to the semiconductor device for efficient heat extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If greater integration of semiconductor devices is implemented to provide more functions, then device functionality and density are improved, but heat generation is exacerbated and heat management becomes more difficult
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat management by forming channels at multiple depths within the substrate. The channel structure extends vertically through different layers including the semiconductor device layer and substrate, enabling heat to be extracted from multiple depth levels simultaneously. This dimensional approach allows effective heat management in highly integrated 3D device architectures where traditional planar cooling becomes insufficient.
2Temperature
If heat dissipation channels are added to the substrate, then heat management capability is improved, but device structural complexity increases
Solution Approach 1:
The substrate is designed to serve multiple functions: it provides mechanical support for the semiconductor device, acts as an electrical isolation layer, and functions as a heat dissipation structure through integrated channels. The same substrate material and structure that support the device also provide thermal management, eliminating the need for separate cooling structures and reducing overall system complexity despite the added channel features.
3Temperature
If channels with varying volumes and depths are formed in the substrate, then heat absorption efficiency is improved, but manufacturing process complexity increases
Solution Approach 1:
The channel structure is divided into multiple segments at different depths within the substrate, with each segment optimized for specific heat absorption requirements. The channels are formed in discrete portions through the device layer and substrate, allowing independent formation and optimization of each segment. This segmented approach enables efficient heat extraction from different depth levels while using standard semiconductor fabrication techniques for each segment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively manages heat dissipation by allowing fluids to flow through the channel, absorbing heat from the semiconductor device and improving its reliability and lifespan by maintaining optimal operating temperatures.
Implementation Method 1
absorbing heat from the semiconductor device
Implementation Method 2
heat dissipation by allowing fluids to flow through the channel
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel, and a semiconductor device. The channel is in the substrate for a fluid to flow through and includes a first channel portion having a first volume, a second channel portion having a second volume, and a third channel portion connecting the first channel portion to the second channel portion. The third channel portion has a third volume smaller than the first volume and the second volume. The semiconductor device is vertically over the channel.