Semiconductor Substrate Layout to Reduce High-Frequency Coupling
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Solution Overview
Problem
High-frequency coupling effects in semiconductor devices, such as high electron mobility transistors (HEMTs), lead to reduced device performance.
Innovation Solution
A semiconductor structure is designed with a substrate featuring insulating vacancies and through holes, where the insulating material fills the vacancies and the conductive layer fills the holes, reducing high-frequency coupling by positioning insulating vacancies under the channel layer of the transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure is used, then the device can be fabricated with standard processes, but high-frequency coupling effects occur that reduce device performance
Solution Approach 1:
An insulating layer is introduced as an intermediary between the substrate and the semiconductor device structure. This insulating layer, positioned between the first contact and the first semiconductor layer, acts as a mediator to block or reduce the high-frequency coupling effect between different components of the device, thereby improving overall device performance without interfering with the basic device operation.
Solution Approach 2:
The device structure is segmented into distinct regions with different electrical characteristics. By dividing the device into separate components (substrate, insulating layer, contact regions, semiconductor layers) with specific spatial arrangements, the patent creates isolated functional zones that prevent unwanted high-frequency coupling while maintaining necessary electrical connections through controlled pathways.
2Reliability
If insulating vacancies are added to reduce high-frequency coupling, then device performance improves, but the fabrication process becomes more complex
Solution Approach 1:
The insulating layer is formed as part of the preliminary substrate preparation before the main semiconductor device fabrication begins. By pre-establishing the insulating structures and vacancies in the substrate, the subsequent device fabrication steps can proceed without additional complex processing, as the coupling reduction features are already in place to guide the formation of the semiconductor layers and contacts.
Data Source
AI summary
A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.