Semiconductor Substrate With Through-Thickness Dielectric Partition

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Solution Overview

Problem

The miniaturization of semiconductor devices poses a challenge in maintaining electrical performance without increasing package size, particularly in chip scale packages where electrical isolation between different parts of the substrate is necessary to prevent shorting and ensure independent operation of active regions.

Innovation Solution

A semiconductor device with a dielectric partition extending through the substrate from the major surface to the backside, electrically isolating different parts and potentially including interlocking portions for mechanical stability, is created by forming trenches, filling them with dielectric material, and singulating the wafer to form substrates with these partitions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the substrate is miniaturized to reduce package size, then the package size is reduced, but electrical isolation between different parts of the substrate becomes more difficult to maintain

Engineering Contradiction:

Improvepackage sizeVSAvoidelectrical isolation

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The substrate is divided into multiple electrically isolated regions by introducing dielectric partitions that extend through the substrate thickness. These partitions segment the conductive substrate into isolated active regions, preventing electrical shorting while maintaining a compact package size.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Dielectric material is selectively placed in specific regions of the substrate to create localized electrical isolation. The dielectric partitions are positioned at critical locations where electrical isolation is needed, while leaving other regions unchanged to maintain device functionality.

Inventive Principle:

Principle #3Local quality

2Reliability

If dielectric partitions are added to electrically isolate active regions from sidewalls, then electrical shorting is prevented, but device complexity increases

Engineering Contradiction:

Improveprevention of electrical shortingVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The harmful conductive path between active regions and sidewalls is removed by extracting material to form trenches, which are then filled with dielectric material. This eliminates the risk of electrical shorting through the substrate sidewalls.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

Dielectric material is introduced as an intermediary substance between the active regions and substrate sidewalls. This intermediate layer provides electrical isolation without requiring direct modification of the active device structures.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Length of stationary object

If the substrate thickness is reduced to enable thinner devices, then device profile is improved, but mechanical robustness decreases

Engineering Contradiction:

Improvesubstrate thicknessVSAvoidmechanical robustness

Core Design Contradiction:

Length of stationary objectVSStrength

Solution Approach 1:

The substrate structure is transformed into a composite by combining the semiconductor substrate material with dielectric partition materials. This composite structure provides both the thin profile needed for modern devices and the mechanical strength required for robustness, as the dielectric partitions act as internal reinforcement elements.

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS10546816B2Semiconductor substrate with electrically isolating dielectric partition

Publication Date: 2020.01.28 NEXPERIA BV

AI summary

A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.